Electrical Manipulation of Intervalley Trions in Twisted MoSe2 Homobilayers at Room Temperature
Abstract The impressive physics and applications of intra‐ and interlayer excitons in a transition metal dichalcogenide twisted‐bilayer make these systems compelling platforms for exploring the manipulation of their optoelectronic properties through electrical fields. This work studies the electrica...
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-05-01
|
| Series: | Advanced Physics Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/apxr.202400135 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850146770972049408 |
|---|---|
| author | Bárbara L. T. Rosa Paulo E. Faria Junior Alisson R. Cadore Yuhui Yang Aris Koulas‐Simos Chirag C. Palekar Seth Ariel Tongay Jaroslav Fabian Stephan Reitzenstein |
| author_facet | Bárbara L. T. Rosa Paulo E. Faria Junior Alisson R. Cadore Yuhui Yang Aris Koulas‐Simos Chirag C. Palekar Seth Ariel Tongay Jaroslav Fabian Stephan Reitzenstein |
| author_sort | Bárbara L. T. Rosa |
| collection | DOAJ |
| description | Abstract The impressive physics and applications of intra‐ and interlayer excitons in a transition metal dichalcogenide twisted‐bilayer make these systems compelling platforms for exploring the manipulation of their optoelectronic properties through electrical fields. This work studies the electrical control of excitonic complexes in twisted MoSe2 homobilayer devices at room temperature. Gate‐dependent micro‐photoluminescence spectroscopy reveals an energy tunability of several meVs originating from the emission of excitonic complexes. Furthermore, this study investigates the twist‐angle dependence of valley properties by fabricating devices with stacking angles of θ ∼ 1°, θ ∼ 4° and θ ∼ 18°. Strengthened by density functional theory calculations, the results suggest that, depending on the twist angle, the conduction band minima and hybridized states at the Q‐point promote the formation of intervalley hybrid trions involving the Q‐and K‐points in the conduction band and the K‐point in the valence band. By revealing the gate control of exciton species in twisted homobilayers, these findings open new avenues for engineering multifunctional optoelectronic devices based on ultrathin semiconducting systems. |
| format | Article |
| id | doaj-art-69552e6f41284e63a7e1d16725fa281c |
| institution | OA Journals |
| issn | 2751-1200 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Physics Research |
| spelling | doaj-art-69552e6f41284e63a7e1d16725fa281c2025-08-20T02:27:45ZengWiley-VCHAdvanced Physics Research2751-12002025-05-0145n/an/a10.1002/apxr.202400135Electrical Manipulation of Intervalley Trions in Twisted MoSe2 Homobilayers at Room TemperatureBárbara L. T. Rosa0Paulo E. Faria Junior1Alisson R. Cadore2Yuhui Yang3Aris Koulas‐Simos4Chirag C. Palekar5Seth Ariel Tongay6Jaroslav Fabian7Stephan Reitzenstein8Institute of Solid State Physics Technische Universität Berlin Berlin 10623 GermanyInstitute for Theoretical Physics University of Regensburg Regensburg 93040 GermanyBrazilian Nanotechnology National Laboratory (LNNano) Brazilian Center for Research in Energy and Materials (CNPEM) Campinas Sao Paulo 13083‐970 BrazilInstitute of Solid State Physics Technische Universität Berlin Berlin 10623 GermanyInstitute of Solid State Physics Technische Universität Berlin Berlin 10623 GermanyInstitute of Solid State Physics Technische Universität Berlin Berlin 10623 GermanyMaterials Science and Engineering, School for Engineering of Matter, Transport and Energy Arizona State University Tempe Arizona 85287 USAInstitute for Theoretical Physics University of Regensburg Regensburg 93040 GermanyInstitute of Solid State Physics Technische Universität Berlin Berlin 10623 GermanyAbstract The impressive physics and applications of intra‐ and interlayer excitons in a transition metal dichalcogenide twisted‐bilayer make these systems compelling platforms for exploring the manipulation of their optoelectronic properties through electrical fields. This work studies the electrical control of excitonic complexes in twisted MoSe2 homobilayer devices at room temperature. Gate‐dependent micro‐photoluminescence spectroscopy reveals an energy tunability of several meVs originating from the emission of excitonic complexes. Furthermore, this study investigates the twist‐angle dependence of valley properties by fabricating devices with stacking angles of θ ∼ 1°, θ ∼ 4° and θ ∼ 18°. Strengthened by density functional theory calculations, the results suggest that, depending on the twist angle, the conduction band minima and hybridized states at the Q‐point promote the formation of intervalley hybrid trions involving the Q‐and K‐points in the conduction band and the K‐point in the valence band. By revealing the gate control of exciton species in twisted homobilayers, these findings open new avenues for engineering multifunctional optoelectronic devices based on ultrathin semiconducting systems.https://doi.org/10.1002/apxr.202400135electrostatic dopingexcitonintervalley trionsMoSe2triontwisted‐homobilayers |
| spellingShingle | Bárbara L. T. Rosa Paulo E. Faria Junior Alisson R. Cadore Yuhui Yang Aris Koulas‐Simos Chirag C. Palekar Seth Ariel Tongay Jaroslav Fabian Stephan Reitzenstein Electrical Manipulation of Intervalley Trions in Twisted MoSe2 Homobilayers at Room Temperature Advanced Physics Research electrostatic doping exciton intervalley trions MoSe2 trion twisted‐homobilayers |
| title | Electrical Manipulation of Intervalley Trions in Twisted MoSe2 Homobilayers at Room Temperature |
| title_full | Electrical Manipulation of Intervalley Trions in Twisted MoSe2 Homobilayers at Room Temperature |
| title_fullStr | Electrical Manipulation of Intervalley Trions in Twisted MoSe2 Homobilayers at Room Temperature |
| title_full_unstemmed | Electrical Manipulation of Intervalley Trions in Twisted MoSe2 Homobilayers at Room Temperature |
| title_short | Electrical Manipulation of Intervalley Trions in Twisted MoSe2 Homobilayers at Room Temperature |
| title_sort | electrical manipulation of intervalley trions in twisted mose2 homobilayers at room temperature |
| topic | electrostatic doping exciton intervalley trions MoSe2 trion twisted‐homobilayers |
| url | https://doi.org/10.1002/apxr.202400135 |
| work_keys_str_mv | AT barbaraltrosa electricalmanipulationofintervalleytrionsintwistedmose2homobilayersatroomtemperature AT pauloefariajunior electricalmanipulationofintervalleytrionsintwistedmose2homobilayersatroomtemperature AT alissonrcadore electricalmanipulationofintervalleytrionsintwistedmose2homobilayersatroomtemperature AT yuhuiyang electricalmanipulationofintervalleytrionsintwistedmose2homobilayersatroomtemperature AT ariskoulassimos electricalmanipulationofintervalleytrionsintwistedmose2homobilayersatroomtemperature AT chiragcpalekar electricalmanipulationofintervalleytrionsintwistedmose2homobilayersatroomtemperature AT setharieltongay electricalmanipulationofintervalleytrionsintwistedmose2homobilayersatroomtemperature AT jaroslavfabian electricalmanipulationofintervalleytrionsintwistedmose2homobilayersatroomtemperature AT stephanreitzenstein electricalmanipulationofintervalleytrionsintwistedmose2homobilayersatroomtemperature |