Extremely High Electron Mobility in GeSn Epitaxial Films by Chemical Vapor Deposition
Abstract Direct‐bandgap germanium‐tin (GeSn) has attracted much interest for high‐performance optoelectronic and electronic device applications. However, the transition from indirect bandgap to direct bandgap in GeSn epitaxial films and the effects on the electron transport properties are not fully...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-07-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400925 |
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