Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs
In recent years, germanium has attracted intensive interests for its promising applications in the microelectronics industry. However, to achieve high performance Ge channel devices, several critical issues still have to be addressed. Amongst them, a high quality gate stack, that is, a low defect in...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
|
| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/639218 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|