Optoelectric coordinated modulation of resistive switching behavior in perovskite based synaptic device
Abstract Triple cation halide perovskite (TCP) stands out as a superior photoelectric material, with a broader absorption range, higher absorption efficiency, and improved environmental stability. Due to its excellent synaptic plasticity, TCP facilitates advanced neural morphological operations like...
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Nature Portfolio
2025-02-01
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| Series: | Scientific Reports |
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| Online Access: | https://doi.org/10.1038/s41598-025-88716-8 |
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| author | Yucheng Wang Ruixi Huang Wenyi Zhang Dingyun Guo Jiawei Zheng Hexin Wang Fobao Huang Zhuoya Wang He Guan |
| author_facet | Yucheng Wang Ruixi Huang Wenyi Zhang Dingyun Guo Jiawei Zheng Hexin Wang Fobao Huang Zhuoya Wang He Guan |
| author_sort | Yucheng Wang |
| collection | DOAJ |
| description | Abstract Triple cation halide perovskite (TCP) stands out as a superior photoelectric material, with a broader absorption range, higher absorption efficiency, and improved environmental stability. Due to its excellent synaptic plasticity, TCP facilitates advanced neural morphological operations like light-assisted learning. Here, a modifying layer of polythiophene (P3HT) was incorporated onto the TCP thin film to enhance the resistive switching (RS) characteristics of the synaptic device, which exhibits excellent stability (103 endurance cycles and > 103 s retention time) and low energy consumption (~ 6.3 pJ for electrical stimulus and ~ 6 pJ for optical stimulus). Additionally, the synaptic properties of the perovskite / P3HT heterojunction synaptic device were explored under optoelectric coordinated modulation, encompassing Long-Term Potentiation (LTP), Long-Term Depression (LTD), frequency-dependent plasticity (SRDP) and voltage-dependent plasticity (SVDP). By leveraging the linear characteristics of synaptic plasticity, arithmetic operations, Pavlovian conditioned reflex and vision recognition are achieved. The recognition accuracies of 89.8% / 88.1% (electric synapse) are enhanced to 92.4% / 92.2% after the introduction of optoelectronic cooperative stimulation on the 8 × 8 and 28 × 28 modified national institute of standards and technology (MNIST) handwritten digit datasets. This study holds significant implications for guiding the optoelectronic co-regulation of perovskite synaptic devices in the field of synaptic electronics. |
| format | Article |
| id | doaj-art-69309b92e8a44720acbd9e8cb0475d8e |
| institution | Kabale University |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Nature Portfolio |
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| spelling | doaj-art-69309b92e8a44720acbd9e8cb0475d8e2025-02-09T12:36:35ZengNature PortfolioScientific Reports2045-23222025-02-0115111010.1038/s41598-025-88716-8Optoelectric coordinated modulation of resistive switching behavior in perovskite based synaptic deviceYucheng Wang0Ruixi Huang1Wenyi Zhang2Dingyun Guo3Jiawei Zheng4Hexin Wang5Fobao Huang6Zhuoya Wang7He Guan8Research&Development Institute of Northwestern Polytechnical University in ShenzhenResearch&Development Institute of Northwestern Polytechnical University in ShenzhenSchool of Microelectronics, Northwestern Polytechnical UniversitySchool of Microelectronics, Northwestern Polytechnical UniversitySchool of Microelectronics, Northwestern Polytechnical UniversitySchool of Microelectronics, Northwestern Polytechnical UniversitySchool of Microelectronics, Northwestern Polytechnical UniversitySchool of Microelectronics, Northwestern Polytechnical UniversitySchool of Microelectronics, Northwestern Polytechnical UniversityAbstract Triple cation halide perovskite (TCP) stands out as a superior photoelectric material, with a broader absorption range, higher absorption efficiency, and improved environmental stability. Due to its excellent synaptic plasticity, TCP facilitates advanced neural morphological operations like light-assisted learning. Here, a modifying layer of polythiophene (P3HT) was incorporated onto the TCP thin film to enhance the resistive switching (RS) characteristics of the synaptic device, which exhibits excellent stability (103 endurance cycles and > 103 s retention time) and low energy consumption (~ 6.3 pJ for electrical stimulus and ~ 6 pJ for optical stimulus). Additionally, the synaptic properties of the perovskite / P3HT heterojunction synaptic device were explored under optoelectric coordinated modulation, encompassing Long-Term Potentiation (LTP), Long-Term Depression (LTD), frequency-dependent plasticity (SRDP) and voltage-dependent plasticity (SVDP). By leveraging the linear characteristics of synaptic plasticity, arithmetic operations, Pavlovian conditioned reflex and vision recognition are achieved. The recognition accuracies of 89.8% / 88.1% (electric synapse) are enhanced to 92.4% / 92.2% after the introduction of optoelectronic cooperative stimulation on the 8 × 8 and 28 × 28 modified national institute of standards and technology (MNIST) handwritten digit datasets. This study holds significant implications for guiding the optoelectronic co-regulation of perovskite synaptic devices in the field of synaptic electronics.https://doi.org/10.1038/s41598-025-88716-8PerovskiteMemristorOptoelectric coordinated modulationVision recognition |
| spellingShingle | Yucheng Wang Ruixi Huang Wenyi Zhang Dingyun Guo Jiawei Zheng Hexin Wang Fobao Huang Zhuoya Wang He Guan Optoelectric coordinated modulation of resistive switching behavior in perovskite based synaptic device Scientific Reports Perovskite Memristor Optoelectric coordinated modulation Vision recognition |
| title | Optoelectric coordinated modulation of resistive switching behavior in perovskite based synaptic device |
| title_full | Optoelectric coordinated modulation of resistive switching behavior in perovskite based synaptic device |
| title_fullStr | Optoelectric coordinated modulation of resistive switching behavior in perovskite based synaptic device |
| title_full_unstemmed | Optoelectric coordinated modulation of resistive switching behavior in perovskite based synaptic device |
| title_short | Optoelectric coordinated modulation of resistive switching behavior in perovskite based synaptic device |
| title_sort | optoelectric coordinated modulation of resistive switching behavior in perovskite based synaptic device |
| topic | Perovskite Memristor Optoelectric coordinated modulation Vision recognition |
| url | https://doi.org/10.1038/s41598-025-88716-8 |
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