Controllable Uniform Green Light Emitters Enabled by Circular HEMT-LED Devices
This paper reports a monolithic integration of GaN high-electron-mobility transistor (HEMT) and green light-emitting diode (LED), where the circular HEMT is surrounded by a ring-shaped LED and two devices are seamlessly interconnected by the LED's n-GaN layer and the HEMT's two...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8449836/ |
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| Summary: | This paper reports a monolithic integration of GaN high-electron-mobility transistor (HEMT) and green light-emitting diode (LED), where the circular HEMT is surrounded by a ring-shaped LED and two devices are seamlessly interconnected by the LED's n-GaN layer and the HEMT's two-dimensional electron gas (2DEG) channel. By adopting such a novel circular layout design, the green HEMT-LED shows a controllable and uniform green light emission at 507 nm by simply tuning its gate voltage. This enables a uniform, controllable green LED light source, serving as an essential element in the red–green–blue (RGB) LED solution for a wide range of applications, such as tunable-spectrum white LED illumination, multichannel visible light communication with wavelength division multiplexing, RGB-based full-color LED displays, and optogenetics. |
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| ISSN: | 1943-0655 |