Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect
Abstract The size of InGaN micro-LEDs is continuously decreasing to meet the demands of various emerging applications, especially in tiny micro-displays such as AR/VR. However, the conventional pixel definition based on plasma etching significantly damages the mesa sidewalls, leading to a severe red...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Publishing Group
2025-01-01
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| Series: | Light: Science & Applications |
| Online Access: | https://doi.org/10.1038/s41377-025-01751-y |
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| _version_ | 1832585357638500352 |
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| author | Zhiyuan Liu Haicheng Cao Xiao Tang Tingang Liu Yi Lu Zixian Jiang Na Xiao Xiaohang Li |
| author_facet | Zhiyuan Liu Haicheng Cao Xiao Tang Tingang Liu Yi Lu Zixian Jiang Na Xiao Xiaohang Li |
| author_sort | Zhiyuan Liu |
| collection | DOAJ |
| description | Abstract The size of InGaN micro-LEDs is continuously decreasing to meet the demands of various emerging applications, especially in tiny micro-displays such as AR/VR. However, the conventional pixel definition based on plasma etching significantly damages the mesa sidewalls, leading to a severe reduction in efficiency as the micro-LED size decreases. This seriously impedes the development and application of micro-LEDs. In this work, we comprehensively explain the origin of micro-LED sidewall effects and corresponding physical models. Subsequently, we systematically review recent progress in micro-LED fabrication aiming at suppressing sidewall effects. Furthermore, we discuss advancements in micro-LED fabrication with “damage-free” techniques, which hold the potential to fundamentally address the issue of plasma damage in the micro-LED process. We believe this review will deepen the understanding of micro-LED sidewall effects and provide a better insight into the latest associated fabrication technologies for high-efficient InGaN micro-LEDs. |
| format | Article |
| id | doaj-art-68fefb0e77d0476e959b2556ffe15e3e |
| institution | Kabale University |
| issn | 2047-7538 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Publishing Group |
| record_format | Article |
| series | Light: Science & Applications |
| spelling | doaj-art-68fefb0e77d0476e959b2556ffe15e3e2025-01-26T12:53:12ZengNature Publishing GroupLight: Science & Applications2047-75382025-01-0114112610.1038/s41377-025-01751-yAdvanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effectZhiyuan Liu0Haicheng Cao1Xiao Tang2Tingang Liu3Yi Lu4Zixian Jiang5Na Xiao6Xiaohang Li7Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST)Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST)Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST)Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST)Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST)Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST)Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST)Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST)Abstract The size of InGaN micro-LEDs is continuously decreasing to meet the demands of various emerging applications, especially in tiny micro-displays such as AR/VR. However, the conventional pixel definition based on plasma etching significantly damages the mesa sidewalls, leading to a severe reduction in efficiency as the micro-LED size decreases. This seriously impedes the development and application of micro-LEDs. In this work, we comprehensively explain the origin of micro-LED sidewall effects and corresponding physical models. Subsequently, we systematically review recent progress in micro-LED fabrication aiming at suppressing sidewall effects. Furthermore, we discuss advancements in micro-LED fabrication with “damage-free” techniques, which hold the potential to fundamentally address the issue of plasma damage in the micro-LED process. We believe this review will deepen the understanding of micro-LED sidewall effects and provide a better insight into the latest associated fabrication technologies for high-efficient InGaN micro-LEDs.https://doi.org/10.1038/s41377-025-01751-y |
| spellingShingle | Zhiyuan Liu Haicheng Cao Xiao Tang Tingang Liu Yi Lu Zixian Jiang Na Xiao Xiaohang Li Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect Light: Science & Applications |
| title | Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect |
| title_full | Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect |
| title_fullStr | Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect |
| title_full_unstemmed | Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect |
| title_short | Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect |
| title_sort | advanced technologies in ingan micro led fabrication to mitigate the sidewall effect |
| url | https://doi.org/10.1038/s41377-025-01751-y |
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