Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect
Abstract The size of InGaN micro-LEDs is continuously decreasing to meet the demands of various emerging applications, especially in tiny micro-displays such as AR/VR. However, the conventional pixel definition based on plasma etching significantly damages the mesa sidewalls, leading to a severe red...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2025-01-01
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| Series: | Light: Science & Applications |
| Online Access: | https://doi.org/10.1038/s41377-025-01751-y |
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| Summary: | Abstract The size of InGaN micro-LEDs is continuously decreasing to meet the demands of various emerging applications, especially in tiny micro-displays such as AR/VR. However, the conventional pixel definition based on plasma etching significantly damages the mesa sidewalls, leading to a severe reduction in efficiency as the micro-LED size decreases. This seriously impedes the development and application of micro-LEDs. In this work, we comprehensively explain the origin of micro-LED sidewall effects and corresponding physical models. Subsequently, we systematically review recent progress in micro-LED fabrication aiming at suppressing sidewall effects. Furthermore, we discuss advancements in micro-LED fabrication with “damage-free” techniques, which hold the potential to fundamentally address the issue of plasma damage in the micro-LED process. We believe this review will deepen the understanding of micro-LED sidewall effects and provide a better insight into the latest associated fabrication technologies for high-efficient InGaN micro-LEDs. |
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| ISSN: | 2047-7538 |