Integrated mode-hop-free tunable lasers at 780 nm for chip-scale classical and quantum photonic applications
In the past decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost. Here, we demonstrate an integrated continuously tunable laser...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-03-01
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| Series: | APL Photonics |
| Online Access: | http://dx.doi.org/10.1063/5.0232377 |
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| author | Joshua E. Castro Eber Nolasco-Martinez Paolo Pintus Zeyu Zhang Boqiang Shen Theodore Morin Lillian Thiel Trevor J. Steiner Nicholas Lewis Sahil D. Patel John E. Bowers David M. Weld Galan Moody |
| author_facet | Joshua E. Castro Eber Nolasco-Martinez Paolo Pintus Zeyu Zhang Boqiang Shen Theodore Morin Lillian Thiel Trevor J. Steiner Nicholas Lewis Sahil D. Patel John E. Bowers David M. Weld Galan Moody |
| author_sort | Joshua E. Castro |
| collection | DOAJ |
| description | In the past decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost. Here, we demonstrate an integrated continuously tunable laser in a heterogeneous gallium arsenide-on-silicon nitride (GaAs-on-SiN) platform that emits in the far-red radiation spectrum near 780 nm, with 20 nm tuning range, <6 kHz intrinsic linewidth, and a >40 dB side-mode suppression ratio. The GaAs optical gain regions are heterogeneously integrated with low-loss SiN waveguides. The narrow linewidth lasing is achieved with an extended cavity consisting of a resonator-based Vernier mirror and a phase shifter. Utilizing synchronous tuning of the integrated heaters, we show mode-hop-free wavelength tuning over a range larger than 100 GHz (200 pm). To demonstrate the potential of the device, we investigate two illustrative applications: (i) the linear characterization of a silicon nitride microresonator designed for entangled-photon pair generation and (ii) the absorption spectroscopy and locking to the D1 and D2 transition lines of 87Rb. The performance of the proposed integrated laser holds promise for a broader spectrum of both classical and quantum applications in the visible range, encompassing communication, control, sensing, and computing. |
| format | Article |
| id | doaj-art-68b26c6b20b242e6bc617f598f047fa2 |
| institution | DOAJ |
| issn | 2378-0967 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Photonics |
| spelling | doaj-art-68b26c6b20b242e6bc617f598f047fa22025-08-20T03:03:07ZengAIP Publishing LLCAPL Photonics2378-09672025-03-01103036102036102-910.1063/5.0232377Integrated mode-hop-free tunable lasers at 780 nm for chip-scale classical and quantum photonic applicationsJoshua E. Castro0Eber Nolasco-Martinez1Paolo Pintus2Zeyu Zhang3Boqiang Shen4Theodore Morin5Lillian Thiel6Trevor J. Steiner7Nicholas Lewis8Sahil D. Patel9John E. Bowers10David M. Weld11Galan Moody12Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USAPhysics Department, University of California, Santa Barbara, California 93106, USAElectrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USANexus Photonics Inc., Goleta, California 93117, USANexus Photonics Inc., Goleta, California 93117, USAElectrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USAElectrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USAMaterials Department, University of California, Santa Barbara, California 93106, USAElectrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USAElectrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USAElectrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USAPhysics Department, University of California, Santa Barbara, California 93106, USAElectrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USAIn the past decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost. Here, we demonstrate an integrated continuously tunable laser in a heterogeneous gallium arsenide-on-silicon nitride (GaAs-on-SiN) platform that emits in the far-red radiation spectrum near 780 nm, with 20 nm tuning range, <6 kHz intrinsic linewidth, and a >40 dB side-mode suppression ratio. The GaAs optical gain regions are heterogeneously integrated with low-loss SiN waveguides. The narrow linewidth lasing is achieved with an extended cavity consisting of a resonator-based Vernier mirror and a phase shifter. Utilizing synchronous tuning of the integrated heaters, we show mode-hop-free wavelength tuning over a range larger than 100 GHz (200 pm). To demonstrate the potential of the device, we investigate two illustrative applications: (i) the linear characterization of a silicon nitride microresonator designed for entangled-photon pair generation and (ii) the absorption spectroscopy and locking to the D1 and D2 transition lines of 87Rb. The performance of the proposed integrated laser holds promise for a broader spectrum of both classical and quantum applications in the visible range, encompassing communication, control, sensing, and computing.http://dx.doi.org/10.1063/5.0232377 |
| spellingShingle | Joshua E. Castro Eber Nolasco-Martinez Paolo Pintus Zeyu Zhang Boqiang Shen Theodore Morin Lillian Thiel Trevor J. Steiner Nicholas Lewis Sahil D. Patel John E. Bowers David M. Weld Galan Moody Integrated mode-hop-free tunable lasers at 780 nm for chip-scale classical and quantum photonic applications APL Photonics |
| title | Integrated mode-hop-free tunable lasers at 780 nm for chip-scale classical and quantum photonic applications |
| title_full | Integrated mode-hop-free tunable lasers at 780 nm for chip-scale classical and quantum photonic applications |
| title_fullStr | Integrated mode-hop-free tunable lasers at 780 nm for chip-scale classical and quantum photonic applications |
| title_full_unstemmed | Integrated mode-hop-free tunable lasers at 780 nm for chip-scale classical and quantum photonic applications |
| title_short | Integrated mode-hop-free tunable lasers at 780 nm for chip-scale classical and quantum photonic applications |
| title_sort | integrated mode hop free tunable lasers at 780 nm for chip scale classical and quantum photonic applications |
| url | http://dx.doi.org/10.1063/5.0232377 |
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