Plasmon-Assisted Selective Enhancement of Direct-Band Transitions in Multi-Layer MoS<sub>2</sub>
Multi-layer MoS<sub>2</sub> offers numerous advantages over mono-layer MoS<sub>2</sub> in terms of improved absorption, enhanced emission and high optical density of states, which make it a better candidate for devices. However, the selective tuning of the direct-band emissio...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8795554/ |
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| Summary: | Multi-layer MoS<sub>2</sub> offers numerous advantages over mono-layer MoS<sub>2</sub> in terms of improved absorption, enhanced emission and high optical density of states, which make it a better candidate for devices. However, the selective tuning of the direct-band emissions in multi-layer MoS<sub>2</sub> is essential for various optoelectronic applications. In this work, we have demonstrated a systematic tuning of direct-band transitions in multi-layer MoS<sub>2</sub> using Au coating prepared by sputtering and e-beam evaporation. We observed nearly 80-fold enhancement in the ratio of direct-to indirect-peak intensity with Au coating (e-beam) to that of the direct-to indirect-peak intensity of pristine samples. Along with that, complete quenching in the emissions corresponding to I-valley has been observed with Au coating. This work provides new dimensions towards the realization of plasmonic/optoelectronic devices based on multi-layer MoS<sub>2</sub>. |
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| ISSN: | 1943-0655 |