Electronic Properties of a Novel Boron Polymorph: Ogee-Borophene

In this computational study, a novel borophene polymorph, Ogee-Borophene, characterized by irregular decagon-shaped hollows was reported. The structure involves a deviation from hexagonal configurations found in all other known borophene polymorphs. The decagon-shaped hollow is highly related to the...

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Main Authors: B. Sarikavak-Lisesivdin, S. B. Lisesivdin
Format: Article
Language:English
Published: Wiley 2023-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2023/9933049
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author B. Sarikavak-Lisesivdin
S. B. Lisesivdin
author_facet B. Sarikavak-Lisesivdin
S. B. Lisesivdin
author_sort B. Sarikavak-Lisesivdin
collection DOAJ
description In this computational study, a novel borophene polymorph, Ogee-Borophene, characterized by irregular decagon-shaped hollows was reported. The structure involves a deviation from hexagonal configurations found in all other known borophene polymorphs. The decagon-shaped hollow is highly related to the anisotropy of the structure, which results in three types of boron atoms with different electronic properties in the structure. In the study, the electronic structure and density of states of this novel structure were investigated with the help of density functional theory calculations. The electronic structure of Ogee-Borophene shows Dirac cone formations near the Fermi level. The discovery of a novel borophene polymorph, Ogee-Borophene, with irregular-shaped hollows represents a different point of view in the 2D materials field. The unique electronic properties of this material suggest that Ogee-Borophene has the potential to be used in a variety of applications, including transistors, and selective sensor applications without the need for additional doping.
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spelling doaj-art-68940bc6e82c4808beb7be65faaa45472025-08-20T03:33:28ZengWileyAdvances in Condensed Matter Physics1687-81242023-01-01202310.1155/2023/9933049Electronic Properties of a Novel Boron Polymorph: Ogee-BoropheneB. Sarikavak-Lisesivdin0S. B. Lisesivdin1Department of Physics, Faculty of ScienceDepartment of Physics, Faculty of ScienceIn this computational study, a novel borophene polymorph, Ogee-Borophene, characterized by irregular decagon-shaped hollows was reported. The structure involves a deviation from hexagonal configurations found in all other known borophene polymorphs. The decagon-shaped hollow is highly related to the anisotropy of the structure, which results in three types of boron atoms with different electronic properties in the structure. In the study, the electronic structure and density of states of this novel structure were investigated with the help of density functional theory calculations. The electronic structure of Ogee-Borophene shows Dirac cone formations near the Fermi level. The discovery of a novel borophene polymorph, Ogee-Borophene, with irregular-shaped hollows represents a different point of view in the 2D materials field. The unique electronic properties of this material suggest that Ogee-Borophene has the potential to be used in a variety of applications, including transistors, and selective sensor applications without the need for additional doping.http://dx.doi.org/10.1155/2023/9933049
spellingShingle B. Sarikavak-Lisesivdin
S. B. Lisesivdin
Electronic Properties of a Novel Boron Polymorph: Ogee-Borophene
Advances in Condensed Matter Physics
title Electronic Properties of a Novel Boron Polymorph: Ogee-Borophene
title_full Electronic Properties of a Novel Boron Polymorph: Ogee-Borophene
title_fullStr Electronic Properties of a Novel Boron Polymorph: Ogee-Borophene
title_full_unstemmed Electronic Properties of a Novel Boron Polymorph: Ogee-Borophene
title_short Electronic Properties of a Novel Boron Polymorph: Ogee-Borophene
title_sort electronic properties of a novel boron polymorph ogee borophene
url http://dx.doi.org/10.1155/2023/9933049
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