Comprehensive Optimization of Dual Threshold Independent-Gate FinFET and SRAM Cells
Independent-Gate (IG) FinFET is a promising device in circuit applications due to its two separated gates, which can be used independently. In this paper, we proposed a comprehensive method to optimize the Dual Threshold (DT) IG FinFET devices by carrying out modulations for the gate electrode work...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2018-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2018/4512924 |
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