GaN Low-dimensional Structures
The GaN low-dimensional structures obtained by nitridation of GaAs porous layers were investigated for the first time. The process of GaN quantum dots formation on the GaAs surface was considered. This process was a result of electrochemical etching of GaAs followed by treatment in atomic nitrogen e...
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| Format: | Article |
| Language: | English |
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Sumy State University
2014-11-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2014/4/articles/jnep_2014_V6_04043.pdf |
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| author | А.F. Dyadenchuk V.V. Kidalov |
| author_facet | А.F. Dyadenchuk V.V. Kidalov |
| author_sort | А.F. Dyadenchuk |
| collection | DOAJ |
| description | The GaN low-dimensional structures obtained by nitridation of GaAs porous layers were investigated for the first time. The process of GaN quantum dots formation on the GaAs surface was considered. This process was a result of electrochemical etching of GaAs followed by treatment in atomic nitrogen environment. Nitrogen atoms, which were deposited on the GaAs surface, replace arsenic ones that lead to the formation of a thin GaN layer on the GaAs surface. The photoluminescence and surface morphology of the structures obtained were studied by scanning electron spectroscopy. |
| format | Article |
| id | doaj-art-68336bb6433c4e74b7e293107050ea0c |
| institution | Kabale University |
| issn | 2077-6772 |
| language | English |
| publishDate | 2014-11-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-68336bb6433c4e74b7e293107050ea0c2025-08-20T03:34:04ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722014-11-016404043-104043-3GaN Low-dimensional StructuresА.F. Dyadenchuk0V.V. Kidalov1Berdyansk State Pedagogical University, 4, Shmydta, 71100 Berdyansk, UkraineBerdyansk State Pedagogical University, 4, Shmydta, 71100 Berdyansk, UkraineThe GaN low-dimensional structures obtained by nitridation of GaAs porous layers were investigated for the first time. The process of GaN quantum dots formation on the GaAs surface was considered. This process was a result of electrochemical etching of GaAs followed by treatment in atomic nitrogen environment. Nitrogen atoms, which were deposited on the GaAs surface, replace arsenic ones that lead to the formation of a thin GaN layer on the GaAs surface. The photoluminescence and surface morphology of the structures obtained were studied by scanning electron spectroscopy.http://jnep.sumdu.edu.ua/download/numbers/2014/4/articles/jnep_2014_V6_04043.pdfNitridation methodQuantum dot |
| spellingShingle | А.F. Dyadenchuk V.V. Kidalov GaN Low-dimensional Structures Журнал нано- та електронної фізики Nitridation method Quantum dot |
| title | GaN Low-dimensional Structures |
| title_full | GaN Low-dimensional Structures |
| title_fullStr | GaN Low-dimensional Structures |
| title_full_unstemmed | GaN Low-dimensional Structures |
| title_short | GaN Low-dimensional Structures |
| title_sort | gan low dimensional structures |
| topic | Nitridation method Quantum dot |
| url | http://jnep.sumdu.edu.ua/download/numbers/2014/4/articles/jnep_2014_V6_04043.pdf |
| work_keys_str_mv | AT afdyadenchuk ganlowdimensionalstructures AT vvkidalov ganlowdimensionalstructures |