Investigation of semiconductor to metallic transitions of perovskite CsGeCl3 material through induced pressure: a DFT calculation for photovoltaic and optoelectronic applications

Abstract First-principle investigations explore materials science for functional purposes. The physical properties of CsGeCl3 are investigated under pressure in steps of 1.0 GPa. The CASTEP and GGA-PBE technique is used to understand the characteristics of cubic-based CsGeCl3 crystal structures with...

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Main Authors: Waqar Azeem, Muhammad Khuram Shahzad, Shoukat Hussain, Fahad Azad, Muhammad Jehanzaib Aslam, Vineet Tirth, Hassan Alqahtani, Ali Algahtani, Tawfiq Al-Mughanam, Yew Hoong Wong
Format: Article
Language:English
Published: SpringerOpen 2024-11-01
Series:Materials for Renewable and Sustainable Energy
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Online Access:https://doi.org/10.1007/s40243-024-00276-5
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