Formation of AlN Layers at Magnetron Sputtering of Aluminum in Ar + N2 Gas Mixture
The influence of technological parameters, such as discharge power, working gas pressure, growth surface temperature, on the formation mechanisms and main characteristics of aluminum nitride has been investigated in the work. On the basis of optimization of the stated technological parameters, the a...
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| Format: | Article |
| Language: | English |
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Sumy State University
2014-06-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2014/2/articles/jnep_2014_V6_02017.pdf |
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| author | A.S. Kornyushchenko |
| author_facet | A.S. Kornyushchenko |
| author_sort | A.S. Kornyushchenko |
| collection | DOAJ |
| description | The influence of technological parameters, such as discharge power, working gas pressure, growth surface temperature, on the formation mechanisms and main characteristics of aluminum nitride has been investigated in the work. On the basis of optimization of the stated technological parameters, the aluminum nitride layers close to stoichiometric composition having hexagonal crystal lattice of wurtzite type have been obtained. The investigations of the structure, phase composition and microhardness have been performed for the layers with elemental composition closest to the stoichiometric one. The microhardness of the layers obtained varies from 0.760 to 1.12 GPa. |
| format | Article |
| id | doaj-art-67fccf6f96ba41fd93da6732b1a47c4c |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2014-06-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-67fccf6f96ba41fd93da6732b1a47c4c2025-08-20T02:23:55ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722014-06-016202017-102017-5Formation of AlN Layers at Magnetron Sputtering of Aluminum in Ar + N2 Gas MixtureA.S. Kornyushchenko0Sumy State University, 2, Rimsky Korsakov Str., 40007 Sumy, UkraineThe influence of technological parameters, such as discharge power, working gas pressure, growth surface temperature, on the formation mechanisms and main characteristics of aluminum nitride has been investigated in the work. On the basis of optimization of the stated technological parameters, the aluminum nitride layers close to stoichiometric composition having hexagonal crystal lattice of wurtzite type have been obtained. The investigations of the structure, phase composition and microhardness have been performed for the layers with elemental composition closest to the stoichiometric one. The microhardness of the layers obtained varies from 0.760 to 1.12 GPa.http://jnep.sumdu.edu.ua/download/numbers/2014/2/articles/jnep_2014_V6_02017.pdfAluminum nitrideNear-equilibrium steady-state condensationReactive magnetron sputteringPlasma-condensate accumulation syste |
| spellingShingle | A.S. Kornyushchenko Formation of AlN Layers at Magnetron Sputtering of Aluminum in Ar + N2 Gas Mixture Журнал нано- та електронної фізики Aluminum nitride Near-equilibrium steady-state condensation Reactive magnetron sputtering Plasma-condensate accumulation syste |
| title | Formation of AlN Layers at Magnetron Sputtering of Aluminum in Ar + N2 Gas Mixture |
| title_full | Formation of AlN Layers at Magnetron Sputtering of Aluminum in Ar + N2 Gas Mixture |
| title_fullStr | Formation of AlN Layers at Magnetron Sputtering of Aluminum in Ar + N2 Gas Mixture |
| title_full_unstemmed | Formation of AlN Layers at Magnetron Sputtering of Aluminum in Ar + N2 Gas Mixture |
| title_short | Formation of AlN Layers at Magnetron Sputtering of Aluminum in Ar + N2 Gas Mixture |
| title_sort | formation of aln layers at magnetron sputtering of aluminum in ar n2 gas mixture |
| topic | Aluminum nitride Near-equilibrium steady-state condensation Reactive magnetron sputtering Plasma-condensate accumulation syste |
| url | http://jnep.sumdu.edu.ua/download/numbers/2014/2/articles/jnep_2014_V6_02017.pdf |
| work_keys_str_mv | AT askornyushchenko formationofalnlayersatmagnetronsputteringofaluminuminarn2gasmixture |