Single-qubit anisotropy induced by micromagnet in Si-MOS quantum dot
Synthesized spin–orbit coupling (SSOC) is crucial for the operation of spin qubits in silicon quantum dot, as it address the challenge posed by the inherently weak intrinsic spin–orbit coupling in silicon. Here, we investigate the anisotropic properties of single spin qubit in silicon metal-oxide-se...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/adaad7 |
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| _version_ | 1832582814159077376 |
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| author | Ning Chu Xin Zhang Rong-Long Ma Zhen-Zhen Kong Wei-Zhu Liao Sheng-Kai Zhu Chu Wang Ao-Ran Li Gui-Lei Wang Gang Cao Hai-Ou Li Guo-Ping Guo |
| author_facet | Ning Chu Xin Zhang Rong-Long Ma Zhen-Zhen Kong Wei-Zhu Liao Sheng-Kai Zhu Chu Wang Ao-Ran Li Gui-Lei Wang Gang Cao Hai-Ou Li Guo-Ping Guo |
| author_sort | Ning Chu |
| collection | DOAJ |
| description | Synthesized spin–orbit coupling (SSOC) is crucial for the operation of spin qubits in silicon quantum dot, as it address the challenge posed by the inherently weak intrinsic spin–orbit coupling in silicon. Here, we investigate the anisotropic properties of single spin qubit in silicon metal-oxide-semiconductor (Si-MOS) quantum dot and provide experimental evidence for the control of SSOC. Additionally, we experimentally demonstrate that tuning the operating point away from the conventional configuration can enhance the quality factor of the spin qubit. These findings lay a foundation for the realization of high-quality tunable spin–orbit qubits. |
| format | Article |
| id | doaj-art-67f3daaba2724dfcbae43d6813add616 |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-67f3daaba2724dfcbae43d6813add6162025-01-29T09:16:56ZengIOP PublishingApplied Physics Express1882-07862025-01-0118101200610.35848/1882-0786/adaad7Single-qubit anisotropy induced by micromagnet in Si-MOS quantum dotNing Chu0Xin Zhang1Rong-Long Ma2Zhen-Zhen Kong3Wei-Zhu Liao4Sheng-Kai Zhu5Chu Wang6Ao-Ran Li7Gui-Lei Wang8Gang Cao9Hai-Ou Li10Guo-Ping Guo11CAS Key Laboratory of Quantum Information, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of China; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of ChinaQuTech and Kavli Institute of Nanoscience, Delft University of Technology , Lorentzweg 1, 2628 CJ Delft, The NetherlandsCAS Key Laboratory of Quantum Information, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of China; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of ChinaIntegrated Circuit Advanced Process R&D Center, Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029, People’s Republic of ChinaCAS Key Laboratory of Quantum Information, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of China; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of ChinaCAS Key Laboratory of Quantum Information, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of China; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of ChinaCAS Key Laboratory of Quantum Information, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of China; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of ChinaCAS Key Laboratory of Quantum Information, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of China; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of ChinaHefei National Laboratory, University of Science and Technology of China , Hefei 230088, People’s Republic of China; Beijing Superstring Academy of Memory Technology , Beijing 100176, People’s Republic of ChinaCAS Key Laboratory of Quantum Information, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of China; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of China; Hefei National Laboratory, University of Science and Technology of China , Hefei 230088, People’s Republic of ChinaCAS Key Laboratory of Quantum Information, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of China; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of China; Hefei National Laboratory, University of Science and Technology of China , Hefei 230088, People’s Republic of ChinaCAS Key Laboratory of Quantum Information, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of China; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei, Anhui 230026, People’s Republic of China; Hefei National Laboratory, University of Science and Technology of China , Hefei 230088, People’s Republic of China; Origin Quantum Computing Company Limited , Hefei, Anhui 230088, People’s Republic of ChinaSynthesized spin–orbit coupling (SSOC) is crucial for the operation of spin qubits in silicon quantum dot, as it address the challenge posed by the inherently weak intrinsic spin–orbit coupling in silicon. Here, we investigate the anisotropic properties of single spin qubit in silicon metal-oxide-semiconductor (Si-MOS) quantum dot and provide experimental evidence for the control of SSOC. Additionally, we experimentally demonstrate that tuning the operating point away from the conventional configuration can enhance the quality factor of the spin qubit. These findings lay a foundation for the realization of high-quality tunable spin–orbit qubits.https://doi.org/10.35848/1882-0786/adaad7Si-MOSspin–orbit couplingsingle spin qubitAnisotropy |
| spellingShingle | Ning Chu Xin Zhang Rong-Long Ma Zhen-Zhen Kong Wei-Zhu Liao Sheng-Kai Zhu Chu Wang Ao-Ran Li Gui-Lei Wang Gang Cao Hai-Ou Li Guo-Ping Guo Single-qubit anisotropy induced by micromagnet in Si-MOS quantum dot Applied Physics Express Si-MOS spin–orbit coupling single spin qubit Anisotropy |
| title | Single-qubit anisotropy induced by micromagnet in Si-MOS quantum dot |
| title_full | Single-qubit anisotropy induced by micromagnet in Si-MOS quantum dot |
| title_fullStr | Single-qubit anisotropy induced by micromagnet in Si-MOS quantum dot |
| title_full_unstemmed | Single-qubit anisotropy induced by micromagnet in Si-MOS quantum dot |
| title_short | Single-qubit anisotropy induced by micromagnet in Si-MOS quantum dot |
| title_sort | single qubit anisotropy induced by micromagnet in si mos quantum dot |
| topic | Si-MOS spin–orbit coupling single spin qubit Anisotropy |
| url | https://doi.org/10.35848/1882-0786/adaad7 |
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