A Physics‐Based Compact Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures for Applications in Analog Memory and Neuromorphic Architectures
Abstract Binary oxide ferroelectrics like doped HfO2, compatible with complementary metal‐oxide‐semiconductor (CMOS) platforms, have gained significant interest for energy efficient, scalable, high‐performance non‐volatile memory and neuromorphic technologies. However, there is no single model for d...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-06-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400840 |
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