Ferroelectric Compensation Effect of the Hard Electrode for the HfO2‐ZrO2 Superlattice Films at the Low‐Annealing Temperature
Abstract This study investigates the ferroelectric (FE) performance of [HfO2/ZrO2]6 superlattice FE capacitors using different top electrodes (TE). The unidirectional rapid thermal annealing (RTA) process from 450 to 600 °C is conducted. The device's remanent polarization (Pr) improved with TE...
Saved in:
| Main Authors: | Chuqian Zhu, Na Bai, Yufan Wang, Huajun Sun, Lanqing Zou, Yunhui Yi, Jiyang Xu, Jiawang Ren, Junming Zhang, Sheng Hu, Kanhao Xue, Lei Ye, Weiming Cheng, Qiang He, Xiangshui Miao |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-08-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400830 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Stabilizing Schottky‐to‐Ohmic Switching in HfO2‐Based Ferroelectric Films via Electrode Design
by: Moritz L. Müller, et al.
Published: (2025-02-01) -
Enhancing ferroelectric stability: wide-range of adaptive control in epitaxial HfO2/ZrO2 superlattices
by: Jingxuan Li, et al.
Published: (2025-07-01) -
Ferroelectric HfO2–ZrO2 Multilayers with Reduced Wake-Up
by: Barnik Mandal, et al.
Published: (2025-03-01) -
Hybrid improper ferroelectricity in a Si-compatible CeO2/HfO2 artificial superlattice
by: Pawan Kumar, et al.
Published: (2024-12-01) -
Cu<sub>2</sub>S Nanocrystals and Their Superlattices
by: Samuel Fuentes, et al.
Published: (2025-04-01)