The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module

The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module

Defect is one of the key factors in reducing the reliability of the insulated gate bipolar transistor (IGBT) module, so developing the diagnostic method for defects inside the IGBT module is an important measure to avoid catastrophic failure and improves the reliability of power electronic converter...

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Bibliographic Details
Main Authors: Shengqi Zhou, Luowei Zhou, Suncheng Liu, Pengju Sun, Quanming Luo, Junke Wu
Format: Article
Language:English
Published: Wiley 2012-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/2012/309789
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