Ferroelectric capacitive memories: devices, arrays, and applications
Abstract Ferroelectric capacitive memories (FCMs) utilize ferroelectric polarization to modulate device capacitance for data storage, providing a new technological pathway to achieve two-terminal non-destructive-read ferroelectric memory. In contrast to the conventional resistive memories, the uniqu...
Saved in:
Main Authors: | Zuopu Zhou, Leming Jiao, Zijie Zheng, Yue Chen, Kaizhen Han, Yuye Kang, Dong Zhang, Xiaolin Wang, Qiwen Kong, Chen Sun, Jiawei Xie, Xiao Gong |
---|---|
Format: | Article |
Language: | English |
Published: |
SpringerOpen
2025-01-01
|
Series: | Nano Convergence |
Subjects: | |
Online Access: | https://doi.org/10.1186/s40580-024-00463-0 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Efficient Implementation of Mahalanobis Distance on Ferroelectric FinFET Crossbar for Outlier Detection
by: Musaib Rafiq, et al.
Published: (2024-01-01) -
The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET
by: Junghyeon Hwang, et al.
Published: (2024-01-01) -
Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor
by: Su Yeon Jung, et al.
Published: (2024-01-01) -
Nematic and Smectic Phases with Proper Ferroelectric Order
by: Grant J. Strachan, et al.
Published: (2025-01-01) -
Progress in the Sputtering Preparation of Hf0.5Zr0.5O2 Ferroelectric Films and Memories
by: Kun Chen, et al.
Published: (2025-02-01)