Ferroelectric capacitive memories: devices, arrays, and applications

Abstract Ferroelectric capacitive memories (FCMs) utilize ferroelectric polarization to modulate device capacitance for data storage, providing a new technological pathway to achieve two-terminal non-destructive-read ferroelectric memory. In contrast to the conventional resistive memories, the uniqu...

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Bibliographic Details
Main Authors: Zuopu Zhou, Leming Jiao, Zijie Zheng, Yue Chen, Kaizhen Han, Yuye Kang, Dong Zhang, Xiaolin Wang, Qiwen Kong, Chen Sun, Jiawei Xie, Xiao Gong
Format: Article
Language:English
Published: SpringerOpen 2025-01-01
Series:Nano Convergence
Subjects:
Online Access:https://doi.org/10.1186/s40580-024-00463-0
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