Ferroelectric capacitive memories: devices, arrays, and applications
Abstract Ferroelectric capacitive memories (FCMs) utilize ferroelectric polarization to modulate device capacitance for data storage, providing a new technological pathway to achieve two-terminal non-destructive-read ferroelectric memory. In contrast to the conventional resistive memories, the uniqu...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2025-01-01
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| Series: | Nano Convergence |
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| Online Access: | https://doi.org/10.1186/s40580-024-00463-0 |
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| author | Zuopu Zhou Leming Jiao Zijie Zheng Yue Chen Kaizhen Han Yuye Kang Dong Zhang Xiaolin Wang Qiwen Kong Chen Sun Jiawei Xie Xiao Gong |
| author_facet | Zuopu Zhou Leming Jiao Zijie Zheng Yue Chen Kaizhen Han Yuye Kang Dong Zhang Xiaolin Wang Qiwen Kong Chen Sun Jiawei Xie Xiao Gong |
| author_sort | Zuopu Zhou |
| collection | DOAJ |
| description | Abstract Ferroelectric capacitive memories (FCMs) utilize ferroelectric polarization to modulate device capacitance for data storage, providing a new technological pathway to achieve two-terminal non-destructive-read ferroelectric memory. In contrast to the conventional resistive memories, the unique capacitive operation mechanism of FCMs transfers the memory reading and in-memory computing to charge domain, offering ultra-high energy efficiency, better compatibility to large-scale array, and negligible read disturbance. In recent years, extensive research has been conducted on FCMs. Various device designs were proposed and experimentally demonstrated with progressively enhanced performance, showing remarkable potential of the novel technology. This article summarizes several typical FCM devices by introducing their mechanisms, comparing their performance, and discussing their limitations. We further investigate the capacitive crossbar array operation and review the recent progress in the FCM integration and array-level demonstrations. In addition, we present the computing-in-memory applications of the FCMs to realize ultra-low-power machine learning acceleration for future computing systems. |
| format | Article |
| id | doaj-art-6659731ff6b24f06831a2b09f686c9c1 |
| institution | Kabale University |
| issn | 2196-5404 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nano Convergence |
| spelling | doaj-art-6659731ff6b24f06831a2b09f686c9c12025-01-26T12:47:29ZengSpringerOpenNano Convergence2196-54042025-01-0112111510.1186/s40580-024-00463-0Ferroelectric capacitive memories: devices, arrays, and applicationsZuopu Zhou0Leming Jiao1Zijie Zheng2Yue Chen3Kaizhen Han4Yuye Kang5Dong Zhang6Xiaolin Wang7Qiwen Kong8Chen Sun9Jiawei Xie10Xiao Gong11Department of Electrical and Computer Engineering, National University of Singapore (NUS)Department of Electrical and Computer Engineering, National University of Singapore (NUS)Department of Electrical and Computer Engineering, National University of Singapore (NUS)Department of Electrical and Computer Engineering, National University of Singapore (NUS)Department of Electrical and Computer Engineering, National University of Singapore (NUS)Department of Electrical and Computer Engineering, National University of Singapore (NUS)Department of Electrical and Computer Engineering, National University of Singapore (NUS)Department of Electrical and Computer Engineering, National University of Singapore (NUS)Department of Electrical and Computer Engineering, National University of Singapore (NUS)Department of Electrical and Computer Engineering, National University of Singapore (NUS)Department of Electrical and Computer Engineering, National University of Singapore (NUS)Department of Electrical and Computer Engineering, National University of Singapore (NUS)Abstract Ferroelectric capacitive memories (FCMs) utilize ferroelectric polarization to modulate device capacitance for data storage, providing a new technological pathway to achieve two-terminal non-destructive-read ferroelectric memory. In contrast to the conventional resistive memories, the unique capacitive operation mechanism of FCMs transfers the memory reading and in-memory computing to charge domain, offering ultra-high energy efficiency, better compatibility to large-scale array, and negligible read disturbance. In recent years, extensive research has been conducted on FCMs. Various device designs were proposed and experimentally demonstrated with progressively enhanced performance, showing remarkable potential of the novel technology. This article summarizes several typical FCM devices by introducing their mechanisms, comparing their performance, and discussing their limitations. We further investigate the capacitive crossbar array operation and review the recent progress in the FCM integration and array-level demonstrations. In addition, we present the computing-in-memory applications of the FCMs to realize ultra-low-power machine learning acceleration for future computing systems.https://doi.org/10.1186/s40580-024-00463-0Ferroelectric capacitive memoryFerroelectric non-volatile capacitorFerroelectric memcapacitorCapacitive crossbar arrayCharge-domain computing |
| spellingShingle | Zuopu Zhou Leming Jiao Zijie Zheng Yue Chen Kaizhen Han Yuye Kang Dong Zhang Xiaolin Wang Qiwen Kong Chen Sun Jiawei Xie Xiao Gong Ferroelectric capacitive memories: devices, arrays, and applications Nano Convergence Ferroelectric capacitive memory Ferroelectric non-volatile capacitor Ferroelectric memcapacitor Capacitive crossbar array Charge-domain computing |
| title | Ferroelectric capacitive memories: devices, arrays, and applications |
| title_full | Ferroelectric capacitive memories: devices, arrays, and applications |
| title_fullStr | Ferroelectric capacitive memories: devices, arrays, and applications |
| title_full_unstemmed | Ferroelectric capacitive memories: devices, arrays, and applications |
| title_short | Ferroelectric capacitive memories: devices, arrays, and applications |
| title_sort | ferroelectric capacitive memories devices arrays and applications |
| topic | Ferroelectric capacitive memory Ferroelectric non-volatile capacitor Ferroelectric memcapacitor Capacitive crossbar array Charge-domain computing |
| url | https://doi.org/10.1186/s40580-024-00463-0 |
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