Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach
Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance. Nanostructuring the GaN can reduce this stress leading to reduction in Quantum Confined Stark Effect. Aligned GaN nanorods based nanodevices hav...
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| Format: | Article |
| Language: | English |
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Sumy State University
2013-05-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2013/2/articles/jnep_2013_V5_02001.pdf |
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| author | Ashutosh Kumar Michael Latzel C. Tessarek S. Christiansen R. Singh |
| author_facet | Ashutosh Kumar Michael Latzel C. Tessarek S. Christiansen R. Singh |
| author_sort | Ashutosh Kumar |
| collection | DOAJ |
| description | Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance. Nanostructuring the GaN can reduce this stress leading to reduction in Quantum Confined Stark Effect. Aligned GaN nanorods based nanodevices have potential applications in electronics and optoelectronics. This paper describes the fabrication of GaN nanorods using Ni nanomasking and reactive ion etching. The morphology of GaN nanorods was studied by field emission scanning electron microscopy. The optical properties of GaN nanorods were studied by Cathodoluminescence (CL) spectroscopy. CL results revealed the existence of characteristic band-edge luminescence and yellow band luminescence. |
| format | Article |
| id | doaj-art-664ffbfc7fd24138be64872f4a7d3042 |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2013-05-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-664ffbfc7fd24138be64872f4a7d30422025-08-20T01:57:19ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722013-05-0152020011Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down ApproachAshutosh KumarMichael LatzelC. TessarekS. ChristiansenR. SinghLarge thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance. Nanostructuring the GaN can reduce this stress leading to reduction in Quantum Confined Stark Effect. Aligned GaN nanorods based nanodevices have potential applications in electronics and optoelectronics. This paper describes the fabrication of GaN nanorods using Ni nanomasking and reactive ion etching. The morphology of GaN nanorods was studied by field emission scanning electron microscopy. The optical properties of GaN nanorods were studied by Cathodoluminescence (CL) spectroscopy. CL results revealed the existence of characteristic band-edge luminescence and yellow band luminescence.http://jnep.sumdu.edu.ua/download/numbers/2013/2/articles/jnep_2013_V5_02001.pdfGaNNanorodNanomaskingReactive-ion etchingCathodoluminescenceBand-edge luminescenceYellow band luminescenc |
| spellingShingle | Ashutosh Kumar Michael Latzel C. Tessarek S. Christiansen R. Singh Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach Журнал нано- та електронної фізики GaN Nanorod Nanomasking Reactive-ion etching Cathodoluminescence Band-edge luminescence Yellow band luminescenc |
| title | Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach |
| title_full | Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach |
| title_fullStr | Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach |
| title_full_unstemmed | Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach |
| title_short | Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach |
| title_sort | characterization of gan nanorods fabricated using ni nanomasking and reactive ion etching a top down approach |
| topic | GaN Nanorod Nanomasking Reactive-ion etching Cathodoluminescence Band-edge luminescence Yellow band luminescenc |
| url | http://jnep.sumdu.edu.ua/download/numbers/2013/2/articles/jnep_2013_V5_02001.pdf |
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