Crystalline Silicon Solar Cells with Thin Silicon Passivation Film Deposited prior to Phosphorous Diffusion
We demonstrate the performance improvement of p-type single-crystalline silicon (sc-Si) solar cells resulting from front surface passivation by a thin amorphous silicon (a-Si) film deposited prior to phosphorus diffusion. The conversion efficiency was improved for the sample with an a-Si film of ~5...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/491475 |
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| Summary: | We demonstrate the performance improvement of p-type single-crystalline silicon (sc-Si) solar cells resulting from front surface passivation by a thin amorphous silicon (a-Si) film deposited prior to phosphorus diffusion. The conversion efficiency was improved for the sample with an a-Si film of ~5 nm thickness deposited on the front surface prior to high-temperature phosphorus diffusion, with respect to the samples with an a-Si film deposited on the front surface after phosphorus diffusion. The improvement in conversion efficiency is 0.4% absolute with respect to a-Si film passivated cells, that is, the cells with an a-Si film deposited on the front surface after phosphorus diffusion. The new technique provided a 0.5% improvement in conversion efficiency compared to the cells without a-Si passivation. Such performance improvements result from reduced surface recombination as well as lowered contact resistance, the latter of which induces a high fill factor of the solar cell. |
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| ISSN: | 1110-662X 1687-529X |