Experimental Progress towards Probing the Ground State of an Electron-Hole Bilayer by Low-Temperature Transport

Recently, it has been possible to design independently contacted electron-hole bilayers (EHBLs) with carrier densities <5×1010 cm2 in each layer and a separation of 10–20 nm in a GaAs/AlGaAs system. In these EHBLs, the interlayer interaction can be stronger than the intralayer interactions. Theor...

Full description

Saved in:
Bibliographic Details
Main Authors: K. Das Gupta, A. F. Croxall, J. Waldie, C. A. Nicoll, H. E. Beere, I. Farrer, D. A. Ritchie, M. Pepper
Format: Article
Language:English
Published: Wiley 2011-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2011/727958
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Recently, it has been possible to design independently contacted electron-hole bilayers (EHBLs) with carrier densities <5×1010 cm2 in each layer and a separation of 10–20 nm in a GaAs/AlGaAs system. In these EHBLs, the interlayer interaction can be stronger than the intralayer interactions. Theoretical works have indicated the possibility of a very rich phase diagram in EHBLs consisting of excitonic superfluid phases, charge density waves, and Wigner crystals. Experiments have revealed that the Coulomb drag on the hole layer shows strong nonmonotonic deviations from a ∼𝑇2 behaviour expected for Fermi-liquids at low temperatures. Simultaneously, an unexpected insulating behaviour in the single-layer resistances (at a highly “metallic” regime with 𝑘𝐹𝑙>500) also appears in both layers despite electron mobilities of above ∼106cm2V−1s−1 and hole mobilities over ∼105cm2V−1s−1. Experimental data also indicates that the point of equal densities (𝑛=𝑝) is not special.
ISSN:1687-8108
1687-8124