A study on the influence of turn-on pulse width on double pulse testing for power semiconductor device

In order to better carry out double pulse testing for power semiconductor devices, the influence of the turn-on pulse width on DPT (double pulse testing) of power semiconductor devices is investigated systematically in the paper. The relationship between switching characteristics of IGBT and MOSFET...

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Bibliographic Details
Main Authors: ZHANG Wenliang, YU Wei, YANG Fei, CUI Lei, LIAO Chenwei, LI Wenjiang
Format: Article
Language:zho
Published: Editorial Department of Electric Drive for Locomotives 2023-09-01
Series:机车电传动
Subjects:
Online Access:http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.017
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