A study on the influence of turn-on pulse width on double pulse testing for power semiconductor device
In order to better carry out double pulse testing for power semiconductor devices, the influence of the turn-on pulse width on DPT (double pulse testing) of power semiconductor devices is investigated systematically in the paper. The relationship between switching characteristics of IGBT and MOSFET...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2023-09-01
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| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.017 |
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| Summary: | In order to better carry out double pulse testing for power semiconductor devices, the influence of the turn-on pulse width on DPT (double pulse testing) of power semiconductor devices is investigated systematically in the paper. The relationship between switching characteristics of IGBT and MOSFET devices and the turn-on pulse width was studied by theoretical analyzing and simulation verification. It was found that the current deviation caused by turn-off delay time and the self-heating effect caused by the testing can affect both IGBT and MOSFET devices. The current deviation caused by turn-off delay time can affect the DPT testing results if the turn-on pulse width is too small. While the self-heating effect caused by the testing can significantly affect the DPT testing results if the turn-on pulse width is too large. Besides, the non-stationary switching effect affects the DPT testing results when the turn-on pulse width is too small. The non-stationary switching effect can cause severe waveform oscillation which may even damage the IGBT, while MOSFET cannot be affected by the nonstationary switching effects. The research results indicate that both IGBT and MOSFET devices have reasonable ranges of turn-on pulse width (or inductance of the load inductor). Within this range, the switching characteristics of the devices are almost not affected by the turn-on pulse width. It is recommended that the upper limit of the turn-on pulse width can be estimated through the thermal impedance curve in the product manual, and the lower limit of the turn-on pulse width can be verified by the double pulse testing. |
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| ISSN: | 1000-128X |