Confined-space annealing of 2D transition metal dichalcogenides: Improving properties, material reorganization, and chalcogen exchange
Annealing can improve the structural quality of transition metal dichalcogenides grown by chemical vapor deposition, atomic layer deposition, and molecular beam epitaxy. However, decomposition and desorption of chalcogens from the layers limit process parameters, such as temperature and duration. In...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-06-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0250685 |
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