DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors
DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor (NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. The negative differential resistance (NDR) resulted from the observation of the hot electron real space transfer effect in InGaAs c...
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| Format: | Article |
| Language: | English |
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Wiley
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1998/95230 |
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| _version_ | 1832563990661693440 |
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| author | H. C. Chen |
| author_facet | H. C. Chen |
| author_sort | H. C. Chen |
| collection | DOAJ |
| description | DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor
(NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. The
negative differential resistance (NDR) resulted from the observation of the hot electron real
space transfer effect in InGaAs channel. By Hall measurements, the structure shows carrier
mobility as high as 4300 (13500) cm2/v-s at 300 (77)K, which is suitable for high frequency
operation. For DC performance, the largest peak-to-valley current ratio of the device is about
5 at room temperature. For AC performance, S-parameter measurements of high frequency
and microwave characteristics indicate a projected maximum frequency of oscillation of
fmax=2.7GHz and a current gain cutoff frequency (fT) occurs at 1.8GHz. |
| format | Article |
| id | doaj-art-64ed7cb1cb3947a3b20b359557a5fe23 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1998-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-64ed7cb1cb3947a3b20b359557a5fe232025-02-03T01:12:05ZengWileyActive and Passive Electronic Components0882-75161563-50311998-01-01212798510.1155/1998/95230DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer TransistorsH. C. Chen0Department of Electrical Engineering, Far-East Junior College of Technology and Commerce, Tainan 744, TaiwanDC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor (NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. The negative differential resistance (NDR) resulted from the observation of the hot electron real space transfer effect in InGaAs channel. By Hall measurements, the structure shows carrier mobility as high as 4300 (13500) cm2/v-s at 300 (77)K, which is suitable for high frequency operation. For DC performance, the largest peak-to-valley current ratio of the device is about 5 at room temperature. For AC performance, S-parameter measurements of high frequency and microwave characteristics indicate a projected maximum frequency of oscillation of fmax=2.7GHz and a current gain cutoff frequency (fT) occurs at 1.8GHz.http://dx.doi.org/10.1155/1998/95230 |
| spellingShingle | H. C. Chen DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors Active and Passive Electronic Components |
| title | DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors |
| title_full | DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors |
| title_fullStr | DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors |
| title_full_unstemmed | DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors |
| title_short | DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors |
| title_sort | dc and ac characteristics of gaas ingaas aigaas real space transfer transistors |
| url | http://dx.doi.org/10.1155/1998/95230 |
| work_keys_str_mv | AT hcchen dcandaccharacteristicsofgaasingaasaigaasrealspacetransfertransistors |