Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure
This paper presents a complete analysis of the kink effect in SOI MOSFET and proposes a method for eliminating kink effect observed in the current-voltage output characteristics of a partially depleted SOI MOSFET device. In this method, back oxide for the device is introduced at selected regions bel...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2012-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2012/565827 |
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