Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure
This paper presents a complete analysis of the kink effect in SOI MOSFET and proposes a method for eliminating kink effect observed in the current-voltage output characteristics of a partially depleted SOI MOSFET device. In this method, back oxide for the device is introduced at selected regions bel...
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2012/565827 |
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| author | M. Narayanan H. Al-Nashash Baquer Mazhari Dipankar Pal Mahesh Chandra |
| author_facet | M. Narayanan H. Al-Nashash Baquer Mazhari Dipankar Pal Mahesh Chandra |
| author_sort | M. Narayanan |
| collection | DOAJ |
| description | This paper presents a complete analysis of the kink effect in SOI MOSFET and proposes a method for eliminating kink effect observed in the current-voltage output characteristics of a partially depleted SOI MOSFET device. In this method, back oxide for the device is introduced at selected regions below the source and drain and not continuously as in an SOI device giving rise to what is termed a “SELBOX” structure. Selective back oxide structure with different gap lengths and thicknesses was studied. Results obtained through numerical simulations indicate that the proposed structure can significantly reduce the kink while still preserving major advantages offered by conventional SOI structure. Although the new structure is capable of eliminating kink, for narrow gaps the device may still exhibit some kink effect. A device model that explains the kink behavior of the structure for varying gap lengths is also developed. |
| format | Article |
| id | doaj-art-64defde74dce4f90ae864e79a40da609 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-64defde74dce4f90ae864e79a40da6092025-02-03T01:24:02ZengWileyActive and Passive Electronic Components0882-75161563-50312012-01-01201210.1155/2012/565827565827Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide StructureM. Narayanan0H. Al-Nashash1Baquer Mazhari2Dipankar Pal3Mahesh Chandra4Department of Electrical Engineering, American University of Sharjah, P.O. Box 26666, Sharjah, UAEDepartment of Electrical Engineering, American University of Sharjah, P.O. Box 26666, Sharjah, UAEDepartment of Electrical Engineering, Indian Institute of Technology, Kanpur 208016, IndiaNERIST, Nirjuli, 791109, Itanagar, IndiaBirla Institute of Technology, Mesra, 835 215 Ranchi, IndiaThis paper presents a complete analysis of the kink effect in SOI MOSFET and proposes a method for eliminating kink effect observed in the current-voltage output characteristics of a partially depleted SOI MOSFET device. In this method, back oxide for the device is introduced at selected regions below the source and drain and not continuously as in an SOI device giving rise to what is termed a “SELBOX” structure. Selective back oxide structure with different gap lengths and thicknesses was studied. Results obtained through numerical simulations indicate that the proposed structure can significantly reduce the kink while still preserving major advantages offered by conventional SOI structure. Although the new structure is capable of eliminating kink, for narrow gaps the device may still exhibit some kink effect. A device model that explains the kink behavior of the structure for varying gap lengths is also developed.http://dx.doi.org/10.1155/2012/565827 |
| spellingShingle | M. Narayanan H. Al-Nashash Baquer Mazhari Dipankar Pal Mahesh Chandra Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure Active and Passive Electronic Components |
| title | Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure |
| title_full | Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure |
| title_fullStr | Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure |
| title_full_unstemmed | Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure |
| title_short | Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure |
| title_sort | analysis of kink reduction in soi mosfet using selective back oxide structure |
| url | http://dx.doi.org/10.1155/2012/565827 |
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