Growth and Properties of (Yb-Er) Co-Doped ZnO Thin Films Deposited via Spray Pyrolysis Technique

Yb<sub>x</sub>Er<sub>y</sub>ZnO thin films with a low concentration (x = 5%, y = 0, 1, 3%) were made on glass substrates using the spray pyrolysis method. The films were characterized through the use of specific techniques to investigate their structural, optical, and electri...

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Main Authors: Abderrahim El Hat, Imane Chaki, Rida Essajai, Abdelmajid Fakhim Lamrani, Boubker Fares, Mohammed Regragui, Aziz Dinia, Mohammed Abd-Lefdil
Format: Article
Language:English
Published: MDPI AG 2025-04-01
Series:Optics
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Online Access:https://www.mdpi.com/2673-3269/6/2/14
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author Abderrahim El Hat
Imane Chaki
Rida Essajai
Abdelmajid Fakhim Lamrani
Boubker Fares
Mohammed Regragui
Aziz Dinia
Mohammed Abd-Lefdil
author_facet Abderrahim El Hat
Imane Chaki
Rida Essajai
Abdelmajid Fakhim Lamrani
Boubker Fares
Mohammed Regragui
Aziz Dinia
Mohammed Abd-Lefdil
author_sort Abderrahim El Hat
collection DOAJ
description Yb<sub>x</sub>Er<sub>y</sub>ZnO thin films with a low concentration (x = 5%, y = 0, 1, 3%) were made on glass substrates using the spray pyrolysis method. The films were characterized through the use of specific techniques to investigate their structural, optical, and electrical properties. The XRD structural analysis of the films revealed that they are polycrystalline with a hexagonal wurtzite structure and a preferential orientation in the (002) direction. The optical characterization of the co-doped layers in the range of 200 to 800 nm revealed that co-doping had a significant impact on the values of transmission. A well-defined peak in the infrared domain centered around 980 nm was observed in photoluminescence measurements. This peak signifies the transition between the electronic levels <sup>2</sup>F<sub>5/2</sub> (ground state) and <sup>2</sup>F<sub>7/2</sub> (excited state), proving that photons are efficiently transferred between the ZnO matrix and the Yb<sup>3+</sup> ion. All layers exhibited n-type conduction and an electrical resistivity decrease to 6.0 × 10<sup>−2</sup> Ω cm according to Hall effect measurements at room temperature.
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spelling doaj-art-64bc1a97d7e44fe9b700889352df23bb2025-08-20T03:27:21ZengMDPI AGOptics2673-32692025-04-01621410.3390/opt6020014Growth and Properties of (Yb-Er) Co-Doped ZnO Thin Films Deposited via Spray Pyrolysis TechniqueAbderrahim El Hat0Imane Chaki1Rida Essajai2Abdelmajid Fakhim Lamrani3Boubker Fares4Mohammed Regragui5Aziz Dinia6Mohammed Abd-Lefdil7Ecole Normale Supérieure (ENS)-Physics Department, Mohammed V University, Rabat 5118, MoroccoMaterials and Nanomaterials for Photovaltaic conversion and and Electrochemical Storage (MANAPSE), Faculty of Sciences, Mohammed V University, Rabat 1014, MoroccoGroup of Semiconductors and Environmental Sensor Technologies, Energy Research Center, Faculty of Science, Mohammed V University, Rabat 1014, MoroccoEcole Normale Supérieure (ENS)-Physics Department, Mohammed V University, Rabat 5118, MoroccoGroup of Semiconductors and Environmental Sensor Technologies, Energy Research Center, Faculty of Science, Mohammed V University, Rabat 1014, MoroccoMaterials and Nanomaterials for Photovaltaic conversion and and Electrochemical Storage (MANAPSE), Faculty of Sciences, Mohammed V University, Rabat 1014, MoroccoInstitute of Physics and Chemistry of Materials of Strasbourg, University of Strasbourg, 67200 Strasbourg, FranceMaterials and Nanomaterials for Photovaltaic conversion and and Electrochemical Storage (MANAPSE), Faculty of Sciences, Mohammed V University, Rabat 1014, MoroccoYb<sub>x</sub>Er<sub>y</sub>ZnO thin films with a low concentration (x = 5%, y = 0, 1, 3%) were made on glass substrates using the spray pyrolysis method. The films were characterized through the use of specific techniques to investigate their structural, optical, and electrical properties. The XRD structural analysis of the films revealed that they are polycrystalline with a hexagonal wurtzite structure and a preferential orientation in the (002) direction. The optical characterization of the co-doped layers in the range of 200 to 800 nm revealed that co-doping had a significant impact on the values of transmission. A well-defined peak in the infrared domain centered around 980 nm was observed in photoluminescence measurements. This peak signifies the transition between the electronic levels <sup>2</sup>F<sub>5/2</sub> (ground state) and <sup>2</sup>F<sub>7/2</sub> (excited state), proving that photons are efficiently transferred between the ZnO matrix and the Yb<sup>3+</sup> ion. All layers exhibited n-type conduction and an electrical resistivity decrease to 6.0 × 10<sup>−2</sup> Ω cm according to Hall effect measurements at room temperature.https://www.mdpi.com/2673-3269/6/2/14YbErZnOrare earththin filmsspray pyrolysis
spellingShingle Abderrahim El Hat
Imane Chaki
Rida Essajai
Abdelmajid Fakhim Lamrani
Boubker Fares
Mohammed Regragui
Aziz Dinia
Mohammed Abd-Lefdil
Growth and Properties of (Yb-Er) Co-Doped ZnO Thin Films Deposited via Spray Pyrolysis Technique
Optics
Yb
Er
ZnO
rare earth
thin films
spray pyrolysis
title Growth and Properties of (Yb-Er) Co-Doped ZnO Thin Films Deposited via Spray Pyrolysis Technique
title_full Growth and Properties of (Yb-Er) Co-Doped ZnO Thin Films Deposited via Spray Pyrolysis Technique
title_fullStr Growth and Properties of (Yb-Er) Co-Doped ZnO Thin Films Deposited via Spray Pyrolysis Technique
title_full_unstemmed Growth and Properties of (Yb-Er) Co-Doped ZnO Thin Films Deposited via Spray Pyrolysis Technique
title_short Growth and Properties of (Yb-Er) Co-Doped ZnO Thin Films Deposited via Spray Pyrolysis Technique
title_sort growth and properties of yb er co doped zno thin films deposited via spray pyrolysis technique
topic Yb
Er
ZnO
rare earth
thin films
spray pyrolysis
url https://www.mdpi.com/2673-3269/6/2/14
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