Gatemonium: A Voltage-Tunable Fluxonium
We present a new style of fluxonium qubit, gatemonium, based on an all-superconductor-semiconductor hybrid platform. The linear inductance is achieved using 600 planar Al-InAs Josephson junctions (JJs) in series. By tuning the single junction with a gate voltage, we demonstrate electrostatic control...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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American Physical Society
2025-02-01
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| Series: | PRX Quantum |
| Online Access: | http://doi.org/10.1103/PRXQuantum.6.010326 |
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| _version_ | 1823860346450870272 |
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| author | William M. Strickland Bassel Heiba Elfeky Lukas Baker Andrea Maiani Jaewoo Lee Ido Levy Jacob Issokson Andrei Vrajitoarea Javad Shabani |
| author_facet | William M. Strickland Bassel Heiba Elfeky Lukas Baker Andrea Maiani Jaewoo Lee Ido Levy Jacob Issokson Andrei Vrajitoarea Javad Shabani |
| author_sort | William M. Strickland |
| collection | DOAJ |
| description | We present a new style of fluxonium qubit, gatemonium, based on an all-superconductor-semiconductor hybrid platform. The linear inductance is achieved using 600 planar Al-InAs Josephson junctions (JJs) in series. By tuning the single junction with a gate voltage, we demonstrate electrostatic control of the effective Josephson energy, tuning the weight of the fictitious phase particle. One- and two-tone spectroscopy of the gatemonium transitions further reveal details of the hybrid plasmon-fluxon spectrum. Accounting for the nonsinusoidal current-phase relation of the single junction, we fit the measured spectra to extract charging and inductive energies. We conduct time-domain characterization of the plasmon modes and find that energy-relaxation times are limited by inductive loss, possibly in the thin aluminum film. We discuss future directions for this platform in gate-voltage-tunable high-plasma-frequency enhanced-impedance junction arrays, and enhanced coherence times for voltage-tunable architectures. |
| format | Article |
| id | doaj-art-637be08c7d304bb0a16713d259195c39 |
| institution | Kabale University |
| issn | 2691-3399 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | PRX Quantum |
| spelling | doaj-art-637be08c7d304bb0a16713d259195c392025-02-10T15:17:13ZengAmerican Physical SocietyPRX Quantum2691-33992025-02-016101032610.1103/PRXQuantum.6.010326Gatemonium: A Voltage-Tunable FluxoniumWilliam M. StricklandBassel Heiba ElfekyLukas BakerAndrea MaianiJaewoo LeeIdo LevyJacob IssoksonAndrei VrajitoareaJavad ShabaniWe present a new style of fluxonium qubit, gatemonium, based on an all-superconductor-semiconductor hybrid platform. The linear inductance is achieved using 600 planar Al-InAs Josephson junctions (JJs) in series. By tuning the single junction with a gate voltage, we demonstrate electrostatic control of the effective Josephson energy, tuning the weight of the fictitious phase particle. One- and two-tone spectroscopy of the gatemonium transitions further reveal details of the hybrid plasmon-fluxon spectrum. Accounting for the nonsinusoidal current-phase relation of the single junction, we fit the measured spectra to extract charging and inductive energies. We conduct time-domain characterization of the plasmon modes and find that energy-relaxation times are limited by inductive loss, possibly in the thin aluminum film. We discuss future directions for this platform in gate-voltage-tunable high-plasma-frequency enhanced-impedance junction arrays, and enhanced coherence times for voltage-tunable architectures.http://doi.org/10.1103/PRXQuantum.6.010326 |
| spellingShingle | William M. Strickland Bassel Heiba Elfeky Lukas Baker Andrea Maiani Jaewoo Lee Ido Levy Jacob Issokson Andrei Vrajitoarea Javad Shabani Gatemonium: A Voltage-Tunable Fluxonium PRX Quantum |
| title | Gatemonium: A Voltage-Tunable Fluxonium |
| title_full | Gatemonium: A Voltage-Tunable Fluxonium |
| title_fullStr | Gatemonium: A Voltage-Tunable Fluxonium |
| title_full_unstemmed | Gatemonium: A Voltage-Tunable Fluxonium |
| title_short | Gatemonium: A Voltage-Tunable Fluxonium |
| title_sort | gatemonium a voltage tunable fluxonium |
| url | http://doi.org/10.1103/PRXQuantum.6.010326 |
| work_keys_str_mv | AT williammstrickland gatemoniumavoltagetunablefluxonium AT basselheibaelfeky gatemoniumavoltagetunablefluxonium AT lukasbaker gatemoniumavoltagetunablefluxonium AT andreamaiani gatemoniumavoltagetunablefluxonium AT jaewoolee gatemoniumavoltagetunablefluxonium AT idolevy gatemoniumavoltagetunablefluxonium AT jacobissokson gatemoniumavoltagetunablefluxonium AT andreivrajitoarea gatemoniumavoltagetunablefluxonium AT javadshabani gatemoniumavoltagetunablefluxonium |