Calibration of a Melt Flow Model for Silicon Crystal Growth with the Floating Zone Method

Calibration of a Melt Flow Model for Silicon Crystal Growth with the Floating Zone Method

The numerical modelling of the melt flow in Si crystal growth plays an important role for improving the resistivity distribution of crystals grown in industrial processes. However, recent series of experiments have shown that the existing numerical model—a finite volume solver with incompressible la...

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Bibliographic Details
Main Authors: Kirils Surovovs, Stanislavs Luka Strozevs, Maksims Surovovs, Robert Menzel, Gundars Ratnieks, Janis Virbulis
Format: Article
Language:English
Published: MDPI AG 2025-07-01
Series:Crystals
Subjects:
silicon single crystals
floating zone
numerical modelling
hydrodynamics
Online Access:https://www.mdpi.com/2073-4352/15/7/667
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