On the Importance of the Polarity for GaN/InGaN Last Quantum Barriers in III-Nitride-Based Light-Emitting Diodes
In this paper, we investigate the electron injection efficiency in terms of different polarities and different polarization charge densities at the <inline-formula><tex-math notation="LaTeX">${\rm{GaN/ InGaN}}$</tex-math> </inline-formula> interface. We find that th...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7745863/ |
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