On the Importance of the Polarity for GaN/InGaN Last Quantum Barriers in III-Nitride-Based Light-Emitting Diodes
In this paper, we investigate the electron injection efficiency in terms of different polarities and different polarization charge densities at the <inline-formula><tex-math notation="LaTeX">${\rm{GaN/ InGaN}}$</tex-math> </inline-formula> interface. We find that th...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7745863/ |
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| Summary: | In this paper, we investigate the electron injection efficiency in terms of different polarities and different polarization charge densities at the <inline-formula><tex-math notation="LaTeX">${\rm{GaN/ InGaN}}$</tex-math> </inline-formula> interface. We find that the growth orientation for the <inline-formula><tex-math notation="LaTeX"> ${\rm{GaN/ InGaN}}$</tex-math></inline-formula>-type last quantum barrier is essentially vital, i.e., the <inline-formula><tex-math notation="LaTeX">${\rm{GaN/ InGaN}}$</tex-math></inline-formula>-type last quantum barrier is not able to effectively reduce the electron leakage and will degrade the light-emitting diode (LED) performance when the <inline-formula><tex-math notation="LaTeX">${\rm{GaN/ InGaN}}$</tex-math></inline-formula> interface is [000–1] polarized. However, a suppressed electron leakage and enhanced optical power can be obtained for III-nitride LEDs grown along the [0001] orientation when the <inline-formula><tex-math notation="LaTeX">${\rm{GaN/ InGaN}}$</tex-math></inline-formula> interface possesses polarization-induced negative charges. We conclude that the polarization-induced negative charges at the [0001] oriented <inline-formula><tex-math notation="LaTeX">${\rm{GaN/ InGaN}}$</tex-math></inline-formula> interface facilitate the surface depletion in the GaN region, i.e., the conduction band of the GaN region is bent in the way of favoring electron depletion and contributes to an enhanced conduction band barrier height for electrons. |
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| ISSN: | 1943-0655 |