Inverse class-f power amplifier using slot resonators as a harmonic filter
The authors proposed and experimentally verified the power amplifier circuit of inverse class F (F–1) based on GaN transistor NPTB00004, operating at 1,7 GHz. The novelty of this scheme is the application of a three-layer structure based on slot rectangular shaped resonators in the ground plane of t...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2014-06-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | https://tkea.com.ua/index.php/journal/article/view/319 |
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