Improving the Performance of Charge Trapping Memtransistor as Synaptic Device by Ti-Doped HfO<sub>2</sub>
In this work, we improved the performance of germanium (Ge) channel Charge Trapping MemTransistors (CTMTs) as synaptic device by using Ti-doped HfO<sub>2</sub> as charge trapping layer (CTL). We manipulated the amount of Ti dopant within the HfO<sub>2</sub> CTL to perform the...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9296335/ |
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