Ghannam, M. Y., & Kamal, H. A. Modeling Surface Recombination at the p-Type Si/SiO2Interface via Dangling Bond Amphoteric Centers. Wiley.
Chicago Style (17th ed.) CitationGhannam, Moustafa Y., and Husain A. Kamal. Modeling Surface Recombination at the P-Type Si/SiO2Interface via Dangling Bond Amphoteric Centers. Wiley.
MLA (9th ed.) CitationGhannam, Moustafa Y., and Husain A. Kamal. Modeling Surface Recombination at the P-Type Si/SiO2Interface via Dangling Bond Amphoteric Centers. Wiley.
Warning: These citations may not always be 100% accurate.