CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION
The study of semiconductor materials and devices containing a narrow layer of impurity atoms and/or intrinsic point defects of the crystal lattice is of fundamental and practical interest. The aim of the study is to calculate the electric parameters of a symmetric silicon diode, in the flat p–n-junc...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Belarusian National Technical University
2018-06-01
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| Series: | Приборы и методы измерений |
| Subjects: | |
| Online Access: | https://pimi.bntu.by/jour/article/view/375 |
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