CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION
The study of semiconductor materials and devices containing a narrow layer of impurity atoms and/or intrinsic point defects of the crystal lattice is of fundamental and practical interest. The aim of the study is to calculate the electric parameters of a symmetric silicon diode, in the flat p–n-junc...
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Belarusian National Technical University
2018-06-01
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| Series: | Приборы и методы измерений |
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| Online Access: | https://pimi.bntu.by/jour/article/view/375 |
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| author | N. A. Poklonski A. I. Kovalev N. I. Gorbachuk S. V. Shpakovski |
| author_facet | N. A. Poklonski A. I. Kovalev N. I. Gorbachuk S. V. Shpakovski |
| author_sort | N. A. Poklonski |
| collection | DOAJ |
| description | The study of semiconductor materials and devices containing a narrow layer of impurity atoms and/or intrinsic point defects of the crystal lattice is of fundamental and practical interest. The aim of the study is to calculate the electric parameters of a symmetric silicon diode, in the flat p–n-junction of which a δ-layer of point triple-charged t-defects is formed. Such a diode is called p–t–n-diode, similarly to p–i–n-diode.Each t-defect can be in one of the three charge states (−1, 0, and +1; in the units of the elementary charge). It is assumed that at room temperature all hydrogen-like acceptors in p-region and hydrogen-like donors in n-region are ionized. It was assumed that the cross-section for v-band hole capture on t-defects is greater than the cross-section for c-band electron capture on t-defects.The system of stationary nonlinear differential equations, which describe in the drift-diffusion approximation a migration of electrons and holes in semiconductors, is solved numerically. The static capacityvoltage and current-voltage characteristics of the silicon diode with nondegenerate regions of pand n-type of electrical conductivity are calculated for forward and reverse electric bias voltage.It is shown by calculation that in the p–t–n-diode containing the δ-layer of t-defects, at the forward bias a region of current density stabilization occurs. At the reverse bias the current density in such a diode is much greater than the one in a p–n-diode without t-defects. With the reverse bias the capacitance of the p–t–n-diode, in contrast to the p–n-diode, increases at first and then decreases. |
| format | Article |
| id | doaj-art-61ff96cdc974462fb9fe399ef27f275a |
| institution | Kabale University |
| issn | 2220-9506 2414-0473 |
| language | English |
| publishDate | 2018-06-01 |
| publisher | Belarusian National Technical University |
| record_format | Article |
| series | Приборы и методы измерений |
| spelling | doaj-art-61ff96cdc974462fb9fe399ef27f275a2025-02-03T05:16:49ZengBelarusian National Technical UniversityПриборы и методы измерений2220-95062414-04732018-06-019213014110.21122/2220-9506-2018-9-2-130-141313CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTIONN. A. Poklonski0A. I. Kovalev1N. I. Gorbachuk2S. V. Shpakovski3Belarusian State UniversityBelarusian State UniversityBelarusian State UniversityBelarusian State UniversityThe study of semiconductor materials and devices containing a narrow layer of impurity atoms and/or intrinsic point defects of the crystal lattice is of fundamental and practical interest. The aim of the study is to calculate the electric parameters of a symmetric silicon diode, in the flat p–n-junction of which a δ-layer of point triple-charged t-defects is formed. Such a diode is called p–t–n-diode, similarly to p–i–n-diode.Each t-defect can be in one of the three charge states (−1, 0, and +1; in the units of the elementary charge). It is assumed that at room temperature all hydrogen-like acceptors in p-region and hydrogen-like donors in n-region are ionized. It was assumed that the cross-section for v-band hole capture on t-defects is greater than the cross-section for c-band electron capture on t-defects.The system of stationary nonlinear differential equations, which describe in the drift-diffusion approximation a migration of electrons and holes in semiconductors, is solved numerically. The static capacityvoltage and current-voltage characteristics of the silicon diode with nondegenerate regions of pand n-type of electrical conductivity are calculated for forward and reverse electric bias voltage.It is shown by calculation that in the p–t–n-diode containing the δ-layer of t-defects, at the forward bias a region of current density stabilization occurs. At the reverse bias the current density in such a diode is much greater than the one in a p–n-diode without t-defects. With the reverse bias the capacitance of the p–t–n-diode, in contrast to the p–n-diode, increases at first and then decreases.https://pimi.bntu.by/jour/article/view/375siliconp–n-junctionδ-layer of point defectscurrent-voltage characteristiccapacity-voltage characteristic |
| spellingShingle | N. A. Poklonski A. I. Kovalev N. I. Gorbachuk S. V. Shpakovski CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION Приборы и методы измерений silicon p–n-junction δ-layer of point defects current-voltage characteristic capacity-voltage characteristic |
| title | CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION |
| title_full | CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION |
| title_fullStr | CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION |
| title_full_unstemmed | CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION |
| title_short | CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION |
| title_sort | calculation of static parameters of silicon diode containing δ layer of triple charged point defects in symmetric p n junction |
| topic | silicon p–n-junction δ-layer of point defects current-voltage characteristic capacity-voltage characteristic |
| url | https://pimi.bntu.by/jour/article/view/375 |
| work_keys_str_mv | AT napoklonski calculationofstaticparametersofsilicondiodecontainingdlayeroftriplechargedpointdefectsinsymmetricpnjunction AT aikovalev calculationofstaticparametersofsilicondiodecontainingdlayeroftriplechargedpointdefectsinsymmetricpnjunction AT nigorbachuk calculationofstaticparametersofsilicondiodecontainingdlayeroftriplechargedpointdefectsinsymmetricpnjunction AT svshpakovski calculationofstaticparametersofsilicondiodecontainingdlayeroftriplechargedpointdefectsinsymmetricpnjunction |