High Performance Phototransistor Based on 0D-CsPbBr<sub>3</sub>/2D-MoS<sub>2</sub> Heterostructure with Gate Tunable Photo-Response
Monolayer MoS<sub>2</sub> has been widely researched in high performance phototransistors for its high carrier mobility and strong photoelectric conversion ability. However, some defects in MoS<sub>2</sub>, such as vacancies or impurities, provide more possibilities for carri...
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| Main Authors: | Chen Yang, Yangyang Xie, Lei Zheng, Hanqiang Liu, Peng Liu, Fang Wang, Junqing Wei, Kailiang Zhang |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-02-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/4/307 |
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