High Performance Phototransistor Based on 0D-CsPbBr<sub>3</sub>/2D-MoS<sub>2</sub> Heterostructure with Gate Tunable Photo-Response
Monolayer MoS<sub>2</sub> has been widely researched in high performance phototransistors for its high carrier mobility and strong photoelectric conversion ability. However, some defects in MoS<sub>2</sub>, such as vacancies or impurities, provide more possibilities for carri...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-02-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/4/307 |
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| Summary: | Monolayer MoS<sub>2</sub> has been widely researched in high performance phototransistors for its high carrier mobility and strong photoelectric conversion ability. However, some defects in MoS<sub>2</sub>, such as vacancies or impurities, provide more possibilities for carrier recombination; thus, restricting the formation of photocurrents and resulting in decreased responsiveness. Herein, all-inorganic CsPbBr<sub>3</sub> perovskite quantum dots (QDs) with high photoelectric conversion efficiency and light absorption coefficients are introduced to enhance the responsivity of a 2D MoS<sub>2</sub> phototransistor. The CsPbBr<sub>3</sub>/MoS<sub>2</sub> heterostructure has a type II energy band, and it has a high responsivity of ~1790 A/W and enhanced detectivity of ~2.4 × 10<sup>11</sup> Jones. Additionally, the heterostructure CsPbBr<sub>3</sub>/MoS<sub>2</sub> enables the synergistic effect mechanism of photoconduction and photogating effects with the gate tunable photo-response, which could also contribute to an improved performance of the MoS<sub>2</sub> phototransistor. This work provides new strategies for performance phototransistors and is expected to play an important role in many fields, such as optical communication, environmental monitoring and biomedical imaging, and promote the development and application of related technologies. |
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| ISSN: | 2079-4991 |