Diode Parameter Determination Applied to LDD-MOSFETs for Device Characterization

Diode Parameter Determination Applied to LDD-MOSFETs for Device Characterization

The electrical properties of the drain-substrate diode of MOSFETs are shown to be related to the device geometrical structure. The two dimensional analysis takes into account the edge effects of the length and width of the gate. Intrinsic parameters are extracted from current-voltage characteristics...

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Bibliographic Details
Main Authors: M. De La Bardonnie, P. Mialhe, E. Bendada, E. Blampain, A. Hoffmann, J.-P. Charles
Format: Article
Language:English
Published: Wiley 1998-01-01
Series:Active and Passive Electronic Components
Subjects:
drain-substrate diode
intrinsic parameters
current-voltage characteristics.
Online Access:http://dx.doi.org/10.1155/1998/54921
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Summary:The electrical properties of the drain-substrate diode of MOSFETs are shown to be related to the device geometrical structure. The two dimensional analysis takes into account the edge effects of the length and width of the gate. Intrinsic parameters are extracted from current-voltage characteristics and obtained dependent on these dimensions.
ISSN:0882-7516
1563-5031

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