Ultrahigh energy storage in process-engineered NaNbO₃-based thin films with superior thermal and cyclic stability
Abstract Dielectric thin film capacitors are essential for miniaturized electronics and energy storage systems, offering ultrafast charge-discharge rates and high reliability. However, achieving high energy density, efficiency, and stability in lead-free systems remains challenging, particularly wit...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-07-01
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| Series: | Scientific Reports |
| Subjects: | |
| Online Access: | https://doi.org/10.1038/s41598-025-05243-2 |
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| Summary: | Abstract Dielectric thin film capacitors are essential for miniaturized electronics and energy storage systems, offering ultrafast charge-discharge rates and high reliability. However, achieving high energy density, efficiency, and stability in lead-free systems remains challenging, particularly with scalable and cost-effective methods. Here, we demonstrate relaxor sodium niobate-based thin films with Bi and Mg substitution, synthesized via optimized chemical solution deposition. By tailoring crystallization temperature and heating rate, we achieved a recoverable energy density of 37 J cm−3 and an efficiency of 80% at 2.45 MV cm−1. The films exhibit exceptional thermal stability, with energy density variation below 10% up to 310 °C, and superior charge-discharge stability beyond 16 million cycles at high fields. Microstructural engineering, involving grain size reduction and enhanced granularity, was critical for achieving a high Weibull breakdown strength (2.29 MV cm−1) and reliability. These films outperform previously reported sodium niobate systems, surpassing lead-based alternatives in environmental sustainability and scalability. Our approach highlights the potential of sodium niobate-based thin films for high-performance dielectric capacitors in harsh environments, offering a scalable pathway for environmentally sustainable energy storage technologies. |
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| ISSN: | 2045-2322 |