Single V2 defect in 4H silicon carbide Schottky diode at low temperature

Single V2 defect in 4H silicon carbide Schottky diode at low temperature

Abstract Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature quantum defects and a wide variety of applications in semiconductor industry. Here, we study the behaviour of...

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Bibliographic Details
Main Authors: Timo Steidl, Pierre Kuna, Erik Hesselmeier-Hüttmann, Di Liu, Rainer Stöhr, Wolfgang Knolle, Misagh Ghezellou, Jawad Ul-Hassan, Maximilian Schober, Michel Bockstedte, Guodong Bian, Adam Gali, Vadim Vorobyov, Jörg Wrachtrup
Format: Article
Language:English
Published: Nature Portfolio 2025-05-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-025-59647-9
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