Observation of Mobility Above 2000 cm2/V s in 2DEG at LaInO3/BaSnO3 Interface by Electric‐Double‐Layer Gating
Abstract The LaInO3/BaSnO3 heterostructure has recently emerged as a promising platform for realizing 2D electron gas (2DEG) with unique transport properties, including excellent field‐effect at room temperature. However, there is a limit to improving its mobility due to intrinsic defects including...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-06-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400811 |
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| Summary: | Abstract The LaInO3/BaSnO3 heterostructure has recently emerged as a promising platform for realizing 2D electron gas (2DEG) with unique transport properties, including excellent field‐effect at room temperature. However, there is a limit to improving its mobility due to intrinsic defects including the threading dislocations occurring during film growth. In spite of such high density defects at present, as an effort to increase the mobility of the 2DEG, the 2D carrier density to 1014 cm−2 by ionic‐liquid gating is increased and we found the resulting 2DEG mobility enhancement up to 2100 cm2 V−1 s−1 at 10 K, which is consistent with the fact that 2‐dimensionality offers more effective screening for defects. This findings offer insights into the properties of 2DEG formed with perovskite oxide semiconductor BaSnO3 as well as highlight its future potential for applications. |
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| ISSN: | 2199-160X |