Flexible Amorphous GeSn MSM Photodetectors
We demonstrate amorphous Ge<sub>0.92</sub>Sn<sub>0.08</sub> surface illuminated metal–semiconductor–metal (MSM) photodetectors on flexible substrates for visible wavelength. Photodetection at 633 nm is achieved with an <italic>I ...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8291610/ |
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| Summary: | We demonstrate amorphous Ge<sub>0.92</sub>Sn<sub>0.08</sub> surface illuminated metal–semiconductor–metal (MSM) photodetectors on flexible substrates for visible wavelength. Photodetection at 633 nm is achieved with an <italic>I–V</italic> response up to 10<sup>–4</sup> A for a 2 V bias voltage. Different evaporation rate effects on the amorphous GeSn MSM photodetector are examined. Bending/strain effects on device performance were studied by evaluating the current density versus voltage characteristics. Amorphous GeSn thin film deposition on polyethylene terephthalate flexible substrate and Ni/Au–GeSn–Ni/Au MSM photodetector finger pattern deposition were performed via thermal evaporation. Photocurrent and dark current densities of amorphous GeSn MSM photodetectors were obtained at 1.36 A/cm<sup>2</sup> and 0.24 A/cm<sup>2</sup>, respectively, where the photocurrent to dark current contrast ratio was found to be equal to 5.6. We also examined the evaporation rate, strain, and bending effect. |
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| ISSN: | 1943-0655 |