Designing a Sub-20V Breakdown Voltage SPAD With Standard CMOS Technology and n/p-well Structure
We have proposed a structural design for a single photon avalanche diode with a low breakdown voltage. This diode is fabricated using Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm HV CMOS technology, and it can maintain a high operating excess voltage in an n-on-p design witho...
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IEEE
2024-01-01
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| Online Access: | https://ieeexplore.ieee.org/document/10419002/ |
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| author | Jau Yang Wu Chun-Hsien Liu |
| author_facet | Jau Yang Wu Chun-Hsien Liu |
| author_sort | Jau Yang Wu |
| collection | DOAJ |
| description | We have proposed a structural design for a single photon avalanche diode with a low breakdown voltage. This diode is fabricated using Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm HV CMOS technology, and it can maintain a high operating excess voltage in an n-on-p design without requiring any additional customized well layers. The n-on-p type device is particularly advantageous for a 3D-stacked backside illuminated structure and offers excellent photon detection capabilities at longer wavelengths. By incorporating a high doping concentration PDD well layer, we can significantly increase the excess bias, resulting in enhanced photon detection probability in the near-infrared wavelength range, all while maintaining a lower voltage due to a reduction in breakdown voltage. This design also leads to power consumption savings. As a result, our designed device is well-suited for consumer applications such as 3D image rendering and LiDAR technology. |
| format | Article |
| id | doaj-art-6004e8e10da149088a31d03efbbb5453 |
| institution | DOAJ |
| issn | 1943-0655 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-6004e8e10da149088a31d03efbbb54532025-08-20T03:15:50ZengIEEEIEEE Photonics Journal1943-06552024-01-011621810.1109/JPHOT.2024.336173210419002Designing a Sub-20V Breakdown Voltage SPAD With Standard CMOS Technology and n/p-well StructureJau Yang Wu0https://orcid.org/0000-0003-1484-3677Chun-Hsien Liu1https://orcid.org/0009-0006-2841-3503Department of Electrical Engineering, Yuan Ze University, Taoyuan, TaiwanInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, TaiwanWe have proposed a structural design for a single photon avalanche diode with a low breakdown voltage. This diode is fabricated using Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm HV CMOS technology, and it can maintain a high operating excess voltage in an n-on-p design without requiring any additional customized well layers. The n-on-p type device is particularly advantageous for a 3D-stacked backside illuminated structure and offers excellent photon detection capabilities at longer wavelengths. By incorporating a high doping concentration PDD well layer, we can significantly increase the excess bias, resulting in enhanced photon detection probability in the near-infrared wavelength range, all while maintaining a lower voltage due to a reduction in breakdown voltage. This design also leads to power consumption savings. As a result, our designed device is well-suited for consumer applications such as 3D image rendering and LiDAR technology.https://ieeexplore.ieee.org/document/10419002/Single photon avalanche diodephoto detectorCMOS sensorLiDAR |
| spellingShingle | Jau Yang Wu Chun-Hsien Liu Designing a Sub-20V Breakdown Voltage SPAD With Standard CMOS Technology and n/p-well Structure IEEE Photonics Journal Single photon avalanche diode photo detector CMOS sensor LiDAR |
| title | Designing a Sub-20V Breakdown Voltage SPAD With Standard CMOS Technology and n/p-well Structure |
| title_full | Designing a Sub-20V Breakdown Voltage SPAD With Standard CMOS Technology and n/p-well Structure |
| title_fullStr | Designing a Sub-20V Breakdown Voltage SPAD With Standard CMOS Technology and n/p-well Structure |
| title_full_unstemmed | Designing a Sub-20V Breakdown Voltage SPAD With Standard CMOS Technology and n/p-well Structure |
| title_short | Designing a Sub-20V Breakdown Voltage SPAD With Standard CMOS Technology and n/p-well Structure |
| title_sort | designing a sub 20v breakdown voltage spad with standard cmos technology and n x002f p well structure |
| topic | Single photon avalanche diode photo detector CMOS sensor LiDAR |
| url | https://ieeexplore.ieee.org/document/10419002/ |
| work_keys_str_mv | AT jauyangwu designingasub20vbreakdownvoltagespadwithstandardcmostechnologyandnx002fpwellstructure AT chunhsienliu designingasub20vbreakdownvoltagespadwithstandardcmostechnologyandnx002fpwellstructure |