Designing a Sub-20V Breakdown Voltage SPAD With Standard CMOS Technology and n/p-well Structure
We have proposed a structural design for a single photon avalanche diode with a low breakdown voltage. This diode is fabricated using Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm HV CMOS technology, and it can maintain a high operating excess voltage in an n-on-p design witho...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10419002/ |
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| Summary: | We have proposed a structural design for a single photon avalanche diode with a low breakdown voltage. This diode is fabricated using Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm HV CMOS technology, and it can maintain a high operating excess voltage in an n-on-p design without requiring any additional customized well layers. The n-on-p type device is particularly advantageous for a 3D-stacked backside illuminated structure and offers excellent photon detection capabilities at longer wavelengths. By incorporating a high doping concentration PDD well layer, we can significantly increase the excess bias, resulting in enhanced photon detection probability in the near-infrared wavelength range, all while maintaining a lower voltage due to a reduction in breakdown voltage. This design also leads to power consumption savings. As a result, our designed device is well-suited for consumer applications such as 3D image rendering and LiDAR technology. |
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| ISSN: | 1943-0655 |