Negative differential resistance and spectral characteristics of original and electron-irradiated (with E = 2 MeV) GaAs1-xPx LEDs

Negative differential resistance and spectral characteristics of original and electron-irradiated (with E = 2 MeV) GaAs1-xPx LEDs

The electrophysical and radiation characteristics of the original and irradiated electrons with E = 2 MeV GaAsP light emitting diodes were studied. The results of measurements of current-current characteristics in the range of 77 - 300 K are given. In the range of 180 - 77 K, a region of negative di...

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Bibliographic Details
Main Authors: T. I. Mosiuk, R. M. Vernydub, P. G. Lytovchenko, M. B. Pinkovska, D. P. Stratilat, V. P. Tartachnyk
Format: Article
Language:English
Published: Institute for Nuclear Research, National Academy of Sciences of Ukraine 2024-06-01
Series:Ядерна фізика та енергетика
Subjects:
gaasp
light emitting diodes
negative differential resistance
current-current characteristics.
Online Access:https://jnpae.kinr.kyiv.ua/25.2/Articles_PDF/jnpae-2024-25-0125-Mosiuk.pdf
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